Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Toshio Sakamizu"'
Publikováno v:
Journal of Photopolymer Science and Technology. 19:367-372
Supercritical carbon dioxide (scCO2) solubility characteristics of various polyphenols and their derivatives were investigated for the sake of resist materials for scCO2 development. Some 3 nuclei-polyphenols were fairly soluble in scCO2 at the condi
Autor:
Hiroshi Shiraishi, Toshio Sakamizu
Publikováno v:
Microelectronic Engineering. :763-770
A positive chemical amplification resist based on acid-catalyzed fragmentation of the acetal groups in the polymer main-chain has been developed for electron-beam (EB) nanolithography. This resist consists of an acid generator, an acid-diffusion cont
Autor:
Toshio Sakamizu, Kei Kasuya, Hiroshi Shiraishi, Michiaki Hashimoto, Tadashi Arai, Sonoko Migitaka
Publikováno v:
Journal of Photopolymer Science and Technology. 14:523-530
We have investigated acid-breakable (AB) resins for chemical-amplification positive resists. The AB resin was synthesized by a co-condensation reaction between an alkali-soluble polyphenol (4, 4′-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]-eth
Publikováno v:
Journal of Photopolymer Science and Technology. 13:405-412
Autor:
Toshio Sakamizu, Tadasi Arai, Yasunori Suzuki, Kohji Katoh, Shou-ichi Uchino, Fumio Murai, Hiroshi Shiraishi
Publikováno v:
Journal of Photopolymer Science and Technology. 11:547-552
The effect of m/p-cresol novolak molecular-weight-distribution (MWD) and dissolution inhibitor structure on resist performance were investigated. A novolak resin richer in p-cresol ratio gave a large dissolution inhibition capability of polymeric dis
Publikováno v:
Journal of Photopolymer Science and Technology. 10:625-628
Publikováno v:
Journal of Photopolymer Science and Technology. 9:21-24
Autor:
Toshio Sakamizu, Keiko Hasegawa, Shinji Okazaki, Hajime Hayakawa, Hiroshi Shiraishi, Fumio Murai, Hidenori Yamaguchi
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 78:81-91
A single-layer resist process using a high resistivity positive resist by solubility reversal (PSR) for electron beam direct writing is described. Conventional PSR designed for mask creation is found to have inhomogeneous dissolution characteristics
Publikováno v:
Journal of Photopolymer Science and Technology. 8:21-28
Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for electron-beam lithography. To enhance the resist performance, we used a new novolak resin and trimethylsulfonium triflate (MES) as
Publikováno v:
Journal of Photopolymer Science and Technology. 7:397-405
The technologies for future lithography have been proposed, such as i-line phase-shifting lithography, deep-UV lithography and electron beam lithography. We have proposed several types of chemical amplification resist systems for future lithography.