Výsledky vyhledávání - "Toshio Nemoto"

On Randomized Approximation for Finding a Level Ideal of a Poset and the Generalized Median Stable Matchings

Autor: Shuji Kijima, Toshio Nemoto

Publikováno v: Mathematics of Operations Research. 37:356-371

This study is concerned with finding a level ideal (LI) of a partially ordered set (poset). Given a finite poset P, the level of each element p ∈ P is defined as the number of ideals that do not include p, then the problem is to find the ith LI–t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::afae82d1203e3e826d131d55cae07ffb
https://doi.org/10.1287/moor.1110.0526

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Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy

Autor: Hajime Okumura, Kulandaivel Jeganathan, Toshio Nemoto, Toshihide Ide, Xu-Qiang Shen, Mitsuaki Shimizu

Publikováno v: Journal of Crystal Growth. 245:15-20

Silicon(Si)-doping was employed to improve the film quality of AlGaN/GaN heterostructure by radio frequency plasma-assisted molecular beam epitaxy. By Si doping during the buffer-layer growth, the electrical and structural characteristics of the film

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e552da86e1a3edbcce062a0cc1254602
https://doi.org/10.1016/s0022-0248(02)01665-2

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AlN/GaN Metal Insulator Semiconductor Field Effect Transistor Using Wet Chemical Etching with Hot Phosphoric Acid

Autor: Hajime Okumura, M. Shimizu, Toshihide Ide, Toshio Nemoto, A. Suzuki, X.-Q. Shen

Publikováno v: physica status solidi (a). 188:351-354

AlN/GaN metal insulator semiconductor field effect transistors (MISFET) were fabricated using wet chemical etching with hot phosphoric acid. This technique improved Ohmic contact resistances for the source and drain, and provided a new and simple fab

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::005391f11a828aee9553fbfb1e212555
https://doi.org/10.1002/1521-396x(200111)188:1<351::aid-pssa351>3.0.co

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An optical fiber flow speed sensor of increased sensitivity

Autor: Hiroshi Iitaka, Sojun Sato, Toshio Nemoto, Yoshihiro Hashimoto

Publikováno v: Electrical Engineering in Japan. 125:1-8

A simple-structured speed sensor in which a polarization-maintaining optical fiber is used as a Karman vortex generator and also as a vortex frequency sensor had earlier been proposed. For measuring ocean current velocity, a double-fin-type sensor mo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::531367a6b9117c4cfb5018b7951fcf45
https://doi.org/10.1002/(sici)1520-6416(199810)125:1<1::aid-eej1>3.0.co

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