Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Toshio Murotani"'
Autor:
Hitoshi MIYATA, Toshio MUROTANI
Publikováno v:
Journal of Research in Science Education. 49:79-90
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3786c212b8a0990f7170c17a11c1bc26
https://doi.org/10.11639/sjst.kj00006252539
https://doi.org/10.11639/sjst.kj00006252539
Autor:
Tetsuo, Morikawa, Toshio, Murotani
Publikováno v:
上越教育大学研究紀要. 19(1):67-81
現代の物理や化学では，2N，10m，2g/cm^3のような，表現（数字列)(空白)(単位記号）が使われている。本稿では，この表現を処理する場合，分解して数字列の代数演算をするならば日本算数
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::d59e91a72ac4d44d960b35d8514fc2e9
http://hdl.handle.net/10513/299
http://hdl.handle.net/10513/299
Autor:
Yoshinori Matsuno, Hiroaki Morikawa, Hisao Kumabe, Mikio Deguchi, Y. Kawama, Takashi Ishihara, Satoshi Arimoto, Toshio Murotani
Publikováno v:
Solar Energy Materials and Solar Cells. 34:257-262
High-efficient operation of a large-area thin film polycrystalline Si solar cell with a novel structure based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. The (100) crystal orientation area o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2c0222567692f28dbe3fff03c86ef8c
https://doi.org/10.1016/0927-0248(94)90048-5
https://doi.org/10.1016/0927-0248(94)90048-5
Publikováno v:
Journal of Crystal Growth. 134:35-42
Selective metalorganic chemical vapor deposition (MOCVD) growth of GaAs on Al 0.48 Ga 0.52 As combined with in situ HCl gas etching was investigated. In the case that AlGaAs surface was oxidized prior to the in situ HCl gas etching, accumulation of b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56810d99cc4abc8835a8d82ca3d6d7e
https://doi.org/10.1016/0022-0248(93)90006-i
https://doi.org/10.1016/0022-0248(93)90006-i
Autor:
Toshio Murotani, Motoharu Miyashita, Akihiro Shima, S. Karakida, Norio Hayafuji, Hirotaka Kizuki, Yutaka Mihashi, S. Kageyama, Nobuaki Kaneno
Publikováno v:
Journal of Crystal Growth. 133:281-288
Successful large-scale (twelve 2 inch diamter wafers/run) metalorganic chemical vapor deposition (MOCVD) growth of AlGaAs multiple quantum well (MQW) structure for 780 nm high-power lasers using a barrel-shaped reactor is demonstrated. Excellent unif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da1a326c43f2353b95d276031c58842
https://doi.org/10.1016/0022-0248(93)90166-t
https://doi.org/10.1016/0022-0248(93)90166-t
Autor:
T. Kamizato, Tetsuya Nishimura, S. Arimoto, K. Mizuguchi, H. Watanabe, Kaoru Kadoiwa, T. Motoda, Toshio Murotani
Publikováno v:
Journal of Crystal Growth. 124:757-762
We introduced a multiple quantum barrier (MQB) which was grown by MOCVD between the active layer and p-cladding layer to enhance potential barrier height. The MOCVD system was improved to realize the growth of MQB structures for the first time. We co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aec6a7fd33fc88105827dee549da9e0
https://doi.org/10.1016/0022-0248(92)90548-w
https://doi.org/10.1016/0022-0248(92)90548-w
Autor:
Toshio Murotani, Zempei Kawazu, Kenji Yasumura, Akihiro Takami, T. Kanno, Tohru Takiguchi, K. Mizuguchi, Kotaro Mitsui, Minoru Saga
Publikováno v:
Journal of Crystal Growth. 117:16-19
We have systematically studied the growth conditions of Cd 0.22 Hg 0.78 Te liquid-phase epitaxy using an open-tube horizontal slider apparatus. Optimizing each parameter, we have reproducibly obtained high-quality p-Cd 0.22 Hg 0.78 Te epitaxial layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd0ad88367f7f5ee9cf44bc92c73761a
https://doi.org/10.1016/0022-0248(92)90708-q
https://doi.org/10.1016/0022-0248(92)90708-q
Publikováno v:
Journal of Crystal Growth. 112:791-796
A 2-reactor MOCVD system is effective to reduce the surface defect which is the trigger for the crack formation, that enables one to obtain a 7 μm thick and crack-free GaAs layer on a 3 inch Si substrate. The etch pit density of the GaAs layer on Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52fb557289b6ef182e0d11357a37c2e9
https://doi.org/10.1016/0022-0248(91)90136-s
https://doi.org/10.1016/0022-0248(91)90136-s
Autor:
Tetsuya Nishimura, Kotaro Mitsui, Toshio Murotani, Motoharu Miyashita, Kaoru Kadoiwa, Hisao Kumabe, Norio Hayafuji
Publikováno v:
Journal of Crystal Growth. 107:468-472
Non-uniform thermal stress distributions due to surface defects can be the origin of crack formation for GaAs layers deposited on Si substrate. A two-reactor MOCVD system specifically designed for GaAs-on-Si has been successfully applied to reduce su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40551407aa035368652418a1ab6f6898
https://doi.org/10.1016/0022-0248(91)90504-x
https://doi.org/10.1016/0022-0248(91)90504-x
Autor:
Toshio Murotani, Eitaro Ishimura, Fumito Uesugi, M. Tsugami, Tatsuya Kimura, K. Mizuguchi, Tadashi Kimura
Publikováno v:
Journal of Crystal Growth. 107:827-831
We have investigated the effect of strained-layer superlattice (SLS) buffer layers on the crystal quality of InP grown on GaAs substrates. The various SLSs such as In0.63Ga0.37As/InP, In0.73Ga0.27As/InP, In0.9Ga0.1P/InP, and GaAs/InP were tested. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::181124cf660be453603dcfdafb808631
https://doi.org/10.1016/0022-0248(91)90564-l
https://doi.org/10.1016/0022-0248(91)90564-l