Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Toshinori Hosokawa"'
Publikováno v:
2022 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ef49725db4ba96a1370e59174919203
https://doi.org/10.1109/dft56152.2022.9962349
https://doi.org/10.1109/dft56152.2022.9962349
Publikováno v:
IEICE Transactions on Information and Systems. :1023-1030
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7a3952f05afb2875ce4237a4ed2301
https://doi.org/10.1587/transinf.2019edp7205
https://doi.org/10.1587/transinf.2019edp7205
Publikováno v:
DFT
It is reported that many cell-internal defects remain undetected when VLSI testing is performed using test sets generated for only traditional fault models like stuck-at faults and transition faults. Therefore, test generation methods for cell-aware,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2004165bb0c0637bcf750d0f94179da5
https://doi.org/10.1109/dft50435.2020.9250810
https://doi.org/10.1109/dft50435.2020.9250810
Publikováno v:
IOLTS
One of the challenges on VLSI testing is to reduce the area overhead of design-for-testability and to maintain the high fault efficiency. To solve the challenge, a design-for-testability method using partial scan design and controller augmentation to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0164b82f092244d382275db9cf4f8058
https://doi.org/10.1109/iolts50870.2020.9159726
https://doi.org/10.1109/iolts50870.2020.9159726
Publikováno v:
IOLTS
High power dissipation can occur by high launch-induced switching activity when the response to a test vector is captured by flip-flops (FFs) in transition delay fault scan testing, resulting in excessive IR drop. Since excessive IR-drop significantl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a9a5f396029b28d519f42ff3150b39
https://doi.org/10.1109/iolts50870.2020.9159735
https://doi.org/10.1109/iolts50870.2020.9159735
Publikováno v:
IEICE Transactions on Information and Systems. :2118-2125
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d474db821bca501246223c25becdb92
https://doi.org/10.1587/transinf.2016edp7418
https://doi.org/10.1587/transinf.2016edp7418
Publikováno v:
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. :2824-2833
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdadbf0354b32a99ae52817eda9971cb
https://doi.org/10.1587/transfun.e100.a.2824
https://doi.org/10.1587/transfun.e100.a.2824
Autor:
Toshinori Hosokawa, Hiroshi Yamazaki, Kenichiro Misawa, Masayoshi Yoshimura, Yuki Hirama, Masavuki Arai, Masayuki Arai
Publikováno v:
DFT
High power dissipation can occur by high launch-induced switching activity when the response to a test vector is captured by flip-flops (FFs) in at-speed scan testing, resulting in excessive IR drop. Since excessive IR-drop significantly increases pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ffba8fb1e66715732a539303b8e313
https://doi.org/10.1109/dft.2019.8875434
https://doi.org/10.1109/dft.2019.8875434
Publikováno v:
DFT
Recently, it is indispensable to test in transition fault model due to timing defects increase along with complication and high speed of VLSI. However, the transition fault coverage tends to be lower than the stuck-at fault coverage due to untestable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899f782de2fb70b5bd09cb26e727cae3
https://doi.org/10.1109/dft.2019.8875322
https://doi.org/10.1109/dft.2019.8875322
Publikováno v:
IOLTS
With the growing clock frequencies and complexity for VLSIs, transition fault testing is required. However, the number of untestable transition faults is generally much more than that of untestable stuck-at faults due to the circuit structures and fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ff304c96983bf29c888a4ac961a1abd
https://doi.org/10.1109/iolts.2019.8854445
https://doi.org/10.1109/iolts.2019.8854445