Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Toshimitsu Nagai"'
Autor:
Tetsuya Morita, Yasuharu Negi, Norio Asakura, Shinichi Muramatsu, Toshimitsu Nagai, K. Hirano, Atsushi Kibune, T. Saito, Yoshihiko Kawai, Motohiro Suyama
Publikováno v:
IEEE Transactions on Nuclear Science. 45:572-575
A hybrid photodetector (HPD) combined with a III-V photocathode is considered to be an ideal photodetector, because the quantum efficiency (QE) is high, the collection efficiency is 100%, and the excess noise factor is negligible. As the first step,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f571457ff0aff6ba487e07c5178b5fa3
https://doi.org/10.1109/23.682450
https://doi.org/10.1109/23.682450
Autor:
Y. Shimizu, K. Katoh, M. Matsumoto, M. Tachino, Minoru Niigaki, Toshimitsu Nagai, Itaru Mizuno, K. Okano, K. Shimano, Tuneo Ihara, Tokuaki Nihashi
Publikováno v:
SPIE Proceedings.
We developed an UV image intensifier tube with a GaN photocathode in semi-transparent mode. In UV spectroscopy and low-light-level UV-imaging applications, there are strong demands for improved detectors which have higher quantum efficiency, low dark
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb410cd3028bf4db42c893e6b38702b4
https://doi.org/10.1117/12.778539
https://doi.org/10.1117/12.778539
Autor:
Kanehiro Machiya, Masahiro Miyao, Hiroaki Kikuchi, Toshimitsu Nagai, Takashi Nomura, Minoru Hagino
Publikováno v:
SHINKU. 28:364-367
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc9af1fce4d6ef2722bee504d39ef63a
https://doi.org/10.3131/jvsj.28.364
https://doi.org/10.3131/jvsj.28.364
Publikováno v:
Applied Surface Science. :1160-1167
An innovative MOCVD system has been developed to grow GaAs, AlGaAs and their heterostructures for the application to a transmission photocathode. In order to characterize the MOCVD system and investigate the interface abruptness, quantum wells with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db8ef373dbca808e497e2dca971890f2
https://doi.org/10.1016/0169-4332(88)90430-8
https://doi.org/10.1016/0169-4332(88)90430-8
Publikováno v:
SHINKU. 28:69-76
The effects of As, P molecular source temperature and substrate temperature on the composition of grown GaAsP were studied. Atomic concentration of P in GaAsP is increased with the substrate temperature. The lattice constant of GaAsP layer is affecte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87e85f8b1b046d16af681098dabea9ec
https://doi.org/10.3131/jvsj.28.69
https://doi.org/10.3131/jvsj.28.69