Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Toshiki Yui"'
Autor:
Takashi Ishida, Takashi Ushijima, Shosuke Nakabayashi, Kozo Kato, Takayuki Koyama, Yoshitaka Nagasato, Junji Ohara, Shinichi Hoshi, Masatake Nagaya, Kazukuni Hara, Takashi Kanemura, Masato Taki, Toshiki Yui, Keisuke Hara, Daisuke Kawaguchi, Koji Kuno, Tetsuya Osajima, Jun Kojima, Tsutomu Uesugi, Atsushi Tanaka, Chiaki Sasaoka, Shoichi Onda, Jun Suda
Publikováno v:
Applied Physics Express, Vol 17, Iss 2, p 026501 (2024)
To address the issue of the high cost of GaN substrates, a recycling process for GaN substrates using a laser slicing technique was investigated. The channel properties of lateral MOSFETs and the reverse characteristics of vertical PN diodes, which r
Externí odkaz:
https://doaj.org/article/3223aa72ff4e4785aca11409f44a7c1a
Autor:
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Toshiki Yui, Yotaro Wani, Tomomi Aratani, Hirotaka Watanabe, Hadi Sena, Yoshio Honda, Yasunori Igasaki, Hiroshi Amano
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almo
Externí odkaz:
https://doaj.org/article/be43e2cf600043c59677c0630e8c6dd3
Autor:
Yotaro Wani, Atsushi Tanaka, Ryuji Sugiura, Hiroshi Amano, Daisuke Kawaguchi, Toshiki Yui, Tomomi Aratani, Yasunori Igasaki, Yoshio Honda, Hadi Sena
Publikováno v:
Applied Physics A. 127
Gallium nitride (GaN)-based devices surpass the traditional silicon-based power devices in terms of higher breakdown voltage, faster-switching speed, higher thermal conductivity, and lower on-resistance. However, heteroepitaxial GaN growths like GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6afc2514289c7fa7d5bf167f7939966d
https://doi.org/10.1007/s00339-021-04808-y
https://doi.org/10.1007/s00339-021-04808-y
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2020:S16306
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::993a02398868f3ef96cc2bf2786bc506
https://doi.org/10.1299/jsmemecj.2020.s16306
https://doi.org/10.1299/jsmemecj.2020.s16306