Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Toshiki Yabu"'
Publikováno v:
IEEE Transactions on Electron Devices. 45:529-537
Experimental results on asymmetry and mismatch (A&M) characteristics are discussed for 0.5-/spl mu/m surface-channel n-MOSFETs and buried-channel p-MOSFETs fabricated with four ion-implantation methods and designed with a conventional and a side-by-s
Publikováno v:
Journal of Photopolymer Science and Technology. 4:361-369
Publikováno v:
IEEE Transactions on Electron Devices. 37:1735-1742
A self-aligned retrograde twin-well structure with a buried p/sup +/-layer surrounding the n-well is presented. The retrograde twin well and buried p/sup +/-layer are fabricated by a single lithographic step using high-energy ion implantation. The re
Publikováno v:
Proceedings of International Conference on Microelectronic Test Structures.
Experimental results on asymmetry and mismatch (A&M) characteristics are discussed for 0.5 /spl mu/m surface-channel n-MOSFETs and buried-channel p-MOSFETs fabricated by four ion-implantation methods and designed by a conventional and a side-by-side
Autor:
Toshiki Yabu, S. Kobayashi, T. Ukeda, M. Segawa, A. Kanda, Kyoji Yamashita, M. Saiki, M. Ogura, M. Yamanaka, H. Okuyama, T. Nakabayashi, T. Uehara, M. Arai
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
A novel local interconnect/contact technology with a self-aligned Metal-Stacked source/Drain structure (MSD) is proposed. This technology provides a self-aligned contact technology for narrow source/drain opening of 0.2 /spl mu/m width with low paras
Publikováno v:
1997 IEEE International Conference on Microelectronic Test Structures Proceedings.
0.5 /spl mu/m CMOS ring-oscillators with LDD-type surface-channel n-MOSFETs and EPS-type buried-channel p-MOSFETs with asymmetric/symmetric source/drain fabricated by four kinds of ion-implantation methods were measured for evaluating the circuit per
Publikováno v:
IEEE Electron Device Letters. 13:636-638
The inverse-narrow-width effect (INWE) of a LOCOS-isolated n-MOSFET formed in high concentration p-wells is described. The threshold behavior is characterized as a function of the concentration of p-well, using experimental data and three-dimensional
Autor:
Toshiki Yabu, Masaru Sasago, Yoshiro Nakata, Naoto Matsuo, Susumu Matsumoto, Shozo Okada, Hisashi Ogawa
Publikováno v:
Japanese Journal of Applied Physics. 30:3671
We developed a new 3-dimensionally(3d) stacked capacitor structure, a tunnel structured stacked capacitor cell (TSSC), for 64Mbit dRAMs. The TSSC with 2 tunnels realized improved reliability the same as that of the conventional stacked capacitor (STC
Publikováno v:
IEEE Transactions on Electron Devices. 33:317-321
This paper describes design and characteristics of a new half-micrometer buried p-channel MOSFET with efficient punch-through stops. The approach for scaling down the buried p-channel MOSFET's is discussed by using two-dimensional process/device simu
Conference
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