Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Toshiki Obara"'
Autor:
Arisa Takebe, Yu Fujita, Tomoji Maeda, Hiroto Komano, Ai Matsue, Kun Zou, Rieko Sayama, Toshiki Obara, Makoto Michikawa, Junjun Liu, Shuyu Liu, Xuefeng Shen, Koichiro Sera, Kota Kikuchi, Tomoko Takahashi
Publikováno v:
Biochemical and biophysical research communications. 512(4)
Alzheimer's disease (AD) is characterized by the formation of extracellular amyloid plaques containing the amyloid β-protein (Aβ) within the parenchyma of the brain. Aβ42, which is 42 amino acids in length, is considered to be the key pathogenic f
Autor:
Katsuhiko Shibusawa, Toshiki Obara, Yuki Kumagai, Daiki Kimoto, Shigetoshi Sugawa, Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Yutaka Kamata, Naoya Akagawa, Tetsuya Goto
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P67-P72
Autor:
Akinobu Teramoto, Shigetoshi Sugawa, Toshiki Obara, Tadahiro Ohmi, Rihito Kuroda, A. Yonezawa
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
The correlation between multiple traps in Random Telegraph Noise (RTN) were evaluated by using Time-Lag-Plot (TLP). The correlations between multiple traps were evaluated by transition paths on the TLP and there are two types of RTN. In the 1 st case
Demonstrating individual leakage path from random telegraph signal of stress induced leakage current
Autor:
Naoya Akagawa, T. Inatsuka, Toshiki Obara, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Time-dependent characteristics of stress induced leakage current (SILC) for the 5.7 and 7.7 nm oxides were evaluated to detect the random telegraph signal (RTS) of gate leakage current. The leakage current from the RTS of IG was extracted. Each curre
Publikováno v:
SPIE Proceedings.
We evaluated effective time constants of random telegraph noise (RTN) with various operation timings of in-pixel source follower transistors statistically, and discuss the dependency of RTN time constants on the duty ratio (on/off ratio) of MOSFET wh
Autor:
Shigetoshi Sugawa, Tadahiro Ohmi, Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, A. Yonezawa
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Autor:
Shigetoshi Sugawa, Tadahiro Ohmi, Toshiki Obara, A. Yonezawa, Akinobu Teramoto, Rihito Kuroda
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
We extracted time constants capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-source voltage from numerous MOSFETs and discuss the trapping and detrapping processes of carriers at the subthreshold voltage region
Autor:
Tadahiro Ohmi, Daiki Kimoto, Katsuhiko Shibusawa, Naoya Akagawa, Tetsuya Goto, Tomoyuki Suwa, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Toshiki Obara, Yutaka Kamata, Yuki Kumagai, Xiang Li
Publikováno v:
Japanese Journal of Applied Physics. 54:04DA04
By introducing high-purity and low-temperature Ar annealing at 850 °C, atomically flat Si surfaces of silicon-on-insulator (SOI) and shallow-trench-isolation (STI)-patterned wafers were obtained. In the case of the STI-patterned wafer, this low-temp
Autor:
Tadahiro Ohmi, Shigetoshi Sugawa, Rihito Kuroda, Akinobu Teramoto, A. Yonezawa, Toshiki Obara
Publikováno v:
Japanese Journal of Applied Physics. 53:04EC19
The random telegraph noise (RTN) characteristics in numerous metal–oxide–semiconductor field-effect transistors were evaluated accurately with small floor noise of 59 µV. Because of the small floor noise RTN characteristics with small amplitudes
Autor:
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa
Publikováno v:
Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p