Zobrazeno 1 - 10
of 222
pro vyhledávání: '"Toshiki Makimoto"'
Autor:
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 027120-027120-7 (2015)
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED
Externí odkaz:
https://doaj.org/article/04cdc22b600a441dab74a284a6fcb195
Publikováno v:
Journal of Applied Physics. 132:165702
The ultrafast transient behavior of InN under intensive laser irradiation remains unclear. The simultaneous measurements of pump–probe transient transmission and reflectivity are reported in this study. The irradiation-induced change in the dielect
Publikováno v:
Journal of Crystal Growth. 514:45-48
The Si doping mechanism is systematically investigated in dilute nitride GaAsN grown by radio frequency plasma assisted molecular beam epitaxy (RF-MBE). We change growth temperature, Si impurity concentration ([Si]), and nitrogen composition ([N]). T
Publikováno v:
Physica B: Condensed Matter. 625:413482
In this study, electron traps in dilute GaAsN are investigated using the temperature dependence of electron concentration (n) and mobility (μe) for annealed heavily Si-doped GaAsN. The temperature dependence of n and μe depends on the annealing tem
Publikováno v:
Thin Solid Films. 660:711-714
Cubic Ti1−xAlxN (x = 0.5, 0.6) films were deposited using RF (radio frequency) magnetron sputtering and cathodic arc ion plating methods on a thermally oxidized Si substrate to evaluate the temperature dependence of their electrical characteristics
Publikováno v:
Crystal Research and Technology. 56:2100204
Autor:
Yoshiji Horikoshi, Makoto Kuramoto, Hiroyuki Urabe, Toshiki Makimoto, Jiro Nishinaga, Tomohiro Nakano, Atsushi Kawaharazuka
Publikováno v:
Journal of Crystal Growth. 425:333-336
The effect of excitons in Al x Ga 1− x As/GaAs superlattice solar cells has been investigated. We have shown that the superlattice active layers are effective to improve the solar cell performances because of the exciton enhanced photo-absorption.
Autor:
Atsushi Kawaharazuka, Atsushi Tackeuchi, Kazuki Honda, Yoshiji Horikoshi, Sathiabama Thiru, Masaki Asakawa, Toshiki Makimoto
Publikováno v:
Journal of Crystal Growth. 425:203-206
High quality CuGaSe 2 and CuInSe 2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe 2 is grown on CuInSe 2 at moderate
Publikováno v:
Journal of Crystal Growth. 425:138-140
A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN l
Autor:
Toshiki Makimoto, Hiroyuki Urabe, Yoshiji Horikoshi, Tomohiro Nakano, Atsushi Kawaharazuka, Makoto Kuramoto
Publikováno v:
Journal of Crystal Growth. 425:330-332
In this paper, we report the effects of surface barrier layers on the characteristics of AlGaAs/GaAs solar cells. The external quantum efficiency (EQE) spectra for AlGaAs barrier samples with different barrier layer AlAs fractions and thickness of th