Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Toshiki Kanaki"'
Autor:
Miao Jiang, Hirokatsu Asahara, Shoichi Sato, Toshiki Kanaki, Hiroki Yamasaki, Shinobu Ohya, Masaaki Tanaka
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-6 (2019)
Spin orbit torque enables an innovative method of manipulating the magnetization of ferromagnets by current injection. Here, Jiang et al. demonstrate efficient full spin–orbit torque switching with an activation current density of ∼3.4 × 105 A c
Externí odkaz:
https://doaj.org/article/eac3814c1dbb49559749a9dfc2dee658
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
Abstract A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer,
Externí odkaz:
https://doaj.org/article/f5fb929f0a4d40e6a88bb87e1c7e967e
Autor:
Tomoaki Ishii, Hiromichi Yamakawa, Toshiki Kanaki, Tatsuya Miyamoto, Noriaki Kida, Hiroshi Okamoto, Masaaki Tanaka, Shinobu Ohya
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
Abstract High-speed magnetization control of ferromagnetic films using light pulses is attracting considerable attention and is increasingly important for the development of spintronic devices. Irradiation with a nearly monocyclic terahertz pulse, wh
Externí odkaz:
https://doaj.org/article/861e5cec51844ba0ae89ff2844ced80c
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size e
Externí odkaz:
https://doaj.org/article/c3d93914213244d0bea559af94fe9baa
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
Scientific Reports
Scientific Reports
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demons
Autor:
Toshiki Kanaki, Shoichi Sato, Hiroki Yamasaki, Shinobu Ohya, Miao Jiang, Masaaki Tanaka, Hirokatsu Asahara
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Autor:
Hiroki Yamasaki, Shinobu Ohya, Miao Jiang, Toshiki Kanaki, Hirokatsu Asahara, Masaaki Tanaka, Shoichi Sato
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-6 (2019)
Nature Communications
Nature Communications
Spin–orbit torque (SOT), which is induced by an in-plane electric current via large spin-orbit coupling, enables an innovative method of manipulating the magnetization of ferromagnets by means of current injection. In conventional SOT bilayer syste
Autor:
Noriaki Kida, Hiromichi Yamakawa, Toshiki Kanaki, Tomoaki Ishii, Shinobu Ohya, Tatsuya Miyamoto, Masaaki Tanaka, Hiroshi Okamoto
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
High-speed magnetization control of ferromagnetic films using light pulses is attracting considerable attention and is increasingly important for the development of spintronic devices. Irradiation with a nearly monocyclic terahertz pulse, which can i
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Publikováno v:
Nature Communications
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of great importa