Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Toshikazu Yamada"'
Autor:
Toshikazu Yamada, Katsuo Fukuhara, Ken Matsuoka, Hiromi Minemawari, Jun’ya Tsutsumi, Nobuko Fukuda, Keisuke Aoshima, Shunto Arai, Yuichi Makita, Hitoshi Kubo, Takao Enomoto, Takanari Togashi, Masato Kurihara, Tatsuo Hasegawa
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
Silver nanocolloids are promising materials for printed electronic technologies. Here, the authors manufacture ultrafine conductive patterns utilizing the exclusive chemisorption of weakly encapsulated silver nanocolloids on a photoactivated surface.
Externí odkaz:
https://doaj.org/article/6a6c4032146a4c32adc106dc1521f6be
Autor:
Dai Hirata, Mao Kashima, Shinsuke Ohnuki, Jun-ichi Maruyama, Tetsuya Goshima, Takeshi Akao, Katsuhiko Kitamoto, Toshikazu Yamada, Farzan Ghanegolmohammadi, Yoshikazu Ohya, Yan Zhou
Publikováno v:
Bioscience, Biotechnology, and Biochemistry. 83:1583-1593
Mutations frequently occur during breeding of sake yeasts and result in unexpected phenotypes. Here, genome editing tools were applied to develop an ideal nonfoam-forming sake yeast strain, K7GE01, which had homozygous awa1∆/awa1∆ deletion allele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::431a3623b5d1ac2846c4c2350f97c623
https://doi.org/10.1080/09168451.2019.1631146
https://doi.org/10.1080/09168451.2019.1631146
Publikováno v:
Journal of Crystal Growth. 512:119-123
We report on residual impurities in semi-polar 3 0 3 ¯ 1 ¯ and 2 0 2 ¯ 1 ¯ GaN homo-epitaxial layer grown by metal-organic chemical vapor deposition. The 3 0 3 ¯ 1 ¯ and 2 0 2 ¯ 1 ¯ GaN layer showed atomically smooth surface and clear steps t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75565614115b2121d88a885e554e5820
https://doi.org/10.1016/j.jcrysgro.2019.02.005
https://doi.org/10.1016/j.jcrysgro.2019.02.005
Publikováno v:
Materials, Vol 13, Iss 4, p 899 (2020)
Materials
Volume 13
Issue 4
Materials
Volume 13
Issue 4
We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b7641dccb8d257387f29368aa93118d
https://www.mdpi.com/1996-1944/13/4/899
https://www.mdpi.com/1996-1944/13/4/899
Autor:
Hoang Van Nguyen, Trung Huu Nguyen, Tokio Takahashi, Mitsuaki Shimizu, Hiroshi Chonan, Toshikazu Yamada, Hisashi Yamada
Publikováno v:
Applied Physics Letters. 119:143503
In this work, InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) based on the AlN/GaN superlattice channel have been demonstrated. The devices fabricated with the AlN/GaN superlattice channel perform superior c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fdb5e779721295e3d57359aad749daf
https://doi.org/10.1063/5.0064935
https://doi.org/10.1063/5.0064935
Publikováno v:
Microelectronic Engineering. 178:182-185
Frequency dispersion of capacitance-voltage (C-V) characteristics of a GaN metal-oxide-semiconductor (MOS) capacitor was systematically investigated. A high frequency C-V curve without including capacitance associated with interface traps and negligi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c1fb71c2c12bea05b8c0e9a188c361
https://doi.org/10.1016/j.mee.2017.05.034
https://doi.org/10.1016/j.mee.2017.05.034
Publikováno v:
The Journal of Physical Chemistry C. 121:8796-8803
Recent reports have demonstrated that printing processes are more suitable for producing high-performance organic thin-film transistors (OTFTs) than vacuum processes, although the formation mechanism of solution-based films is not yet understood. Her
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1de2daf60790a26aaf39c2bd9f68604
https://doi.org/10.1021/acs.jpcc.7b02143
https://doi.org/10.1021/acs.jpcc.7b02143
Publikováno v:
Organic Electronics. 41:137-142
The modification of printed silver electrode surfaces for use as the bottom-contact electrodes of organic thin-film transistors (OTFTs) is reported. Printed silver electrodes fabricated using the surface photoreactive nanometal printing (SuPR-NaP) te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ac8875364e8142a9f2d294b1d2bf95
https://doi.org/10.1016/j.orgel.2016.11.042
https://doi.org/10.1016/j.orgel.2016.11.042
Autor:
Hiromi Minemawari, Satoru Inoue, Yukihiro Shimoi, Reiji Kumai, Tatsuo Hasegawa, Toshikazu Yamada, Mutsuo Tanaka, Seiji Tsuzuki
Publikováno v:
Chemistry of Materials. 29:1245-1254
Herein, we report the stabilization and modulation of layered-herringbone (LHB) packing, which is known to afford high-performance organic thin-film transistors, based on crystal structure analyses and calculations of intermolecular interaction energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d87e1fb8873a8e43d0aabc14273e4d
https://doi.org/10.1021/acs.chemmater.6b04628
https://doi.org/10.1021/acs.chemmater.6b04628
Autor:
Yong-Young Noh, Xuying Liu, Chuan Liu, Toshikazu Yamada, Yun Li, Huabin Sun, Yi Shi, Yong Xu, Michael V. Lee, Takeo Minari, Tatsuo Hasegawa
Publikováno v:
Materials Horizons. 4:259-267
The wetting of a droplet on a particular solid surface of a thin liquid film followed by solvent drying is a crucial process for nanostructure formation. However, this thin liquid film was commonly observed to rupture due to the instability of the gi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d4772d269faca68a1fce5fbe4d2add2
https://doi.org/10.1039/c6mh00411c
https://doi.org/10.1039/c6mh00411c