Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Toshikazu Umatate"'
Autor:
Toshikazu Umatate
Publikováno v:
oemagazine.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28f81f954f99349c75d16c8dd99cecf3
https://doi.org/10.1117/2.5200503.0004
https://doi.org/10.1117/2.5200503.0004
Publikováno v:
SPIE Proceedings.
Nikon has developed cutting-edge lithography tools, and its product lineup encompasses all exposure wavelengths. They are: the NSR-S307E ArF scanner for the 90nm node; the NSR-S207D KrF scanner for the 110nm node; the NSR-SF130 i-line stepper for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b56ad4ec597ef8dfcdbb45372d90c0a
https://doi.org/10.1117/12.537214
https://doi.org/10.1117/12.537214
Autor:
Osamu Ikenaga, Toshikazu Umatate, Soichi Inoue, Ichiro Mori, Naoya Hayashi, Tomotaka Higaki, Fumiaki Shigemitsu, Yuki Ishii, Haruo Kokubo, Suigen Kyoh, Nobuyuki Irie
Publikováno v:
SPIE Proceedings.
The severe mask specification makes mask cost increase drastically. Especially, the increase in the mask cost deals ASIC businesses a fatal blow due to its small chip volume per product. Pattern writing cost has always occupied the main part of the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b586d9863201cc394a94d5b6097d9a8
https://doi.org/10.1117/12.504178
https://doi.org/10.1117/12.504178
Autor:
Yuuki Ishii, Haruo Kokubo, Soichi Inoue, Toshikazu Umatate, Naoya Hayashi, Ichiro Mori, Suigen Kyoh, Nobuyuki Irie
Publikováno v:
SPIE Proceedings.
Device masks for 180nm lithography was fabricated by PR system. These masks were verified by device yields comparing with masks written by other conventional systems. There were no differences in device yields between PR system and conventional syste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9540ab9ee165903ab36a67a38885816
https://doi.org/10.1117/12.438376
https://doi.org/10.1117/12.438376
Autor:
Iwao Higashikawa, Yuuki Ishii, Suigen Kyoh, Katsuya Okumura, Nobuyuki Irie, Soichi Inoue, Ichiro Mori, Satoshi Tanaka, Nobutaka Magome, Toshikazu Umatate, Koji Muramatsu
Publikováno v:
SPIE Proceedings.
A Device mask of 180nm generation was fabricated by Photomask Repeater system and the performance of it proved to be high by the results of fabricated mask. Great margins between the results of the fabricated mask and specifications suggest that lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ffaaa02f9acae497981018367030a3
https://doi.org/10.1117/12.410728
https://doi.org/10.1117/12.410728
Autor:
Yuuki Ishii, Iwao Higashikawa, Katsuya Okumura, Satoshi Tanaka, Toshikazu Umatate, Nobutaka Magome, Suigen Kyoh, Ichiro Mori, Soichi Inoue, Nobuyuki Irie, Koji Muramatsu
Publikováno v:
SPIE Proceedings.
We have developed a new reticle exposure system, which can fabricate 150nm generation masks by means of a stitching exposure technique. We call this exposure system the Photomask Repeater, or high accuracy repeater (HR). HR is a modified i-line stepp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96822f49f900cb013478a794bd284002
https://doi.org/10.1117/12.392077
https://doi.org/10.1117/12.392077
Autor:
Nobutaka Magome, Suigen Kyoh, Nobuyuki Irie, Ichiro Mori, Iwao Higashikawa, Koji Muramatsu, Toshikazu Umatate, Soichi Inoue, Katsuya Okumura, Yuuki Ishii, Shun-Ichiro Tanaka
Publikováno v:
SPIE Proceedings.
New pattern generation system, Photomask Repeater, based on i-line stepper has been developed. This system can transfer device patterns from master masks onto a photomask plate with 22mm field size. To print a chip larger than the 22mm field, stitchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29f5a47dcc9737a4e3cad50ba9a7f9f
https://doi.org/10.1117/12.392096
https://doi.org/10.1117/12.392096
Autor:
Steve Slonaker, Sean McNamara, Kunio Konno, Ron Miller, Nobutaka Magome, Toshikazu Umatate, Hiroki Tateno, Burn J. Lin
Publikováno v:
SPIE Proceedings.
In wafer steppers, the alignment of an exposure field to the reticle being imaged is known to affect the success or failure of that field's circuit(s). Because of this relationship between alignment accuracy and device yield, much emphasis is placed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc58f4d7a2f32ead2ecec2f0936828a
https://doi.org/10.1117/12.968404
https://doi.org/10.1117/12.968404