Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Toshikazu Tanioka"'
Publikováno v:
Materials Science Forum. 858:829-832
High threshold voltage low loss 600 V 4H-SiC MOSFETs have been fabricated successfully using a re-oxidation technique for gate oxides and an n-type doping in the Junction Field Effect Transistor region of the MOSFET with shrunk MOS cells. The MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41c5444d1470f04dc8742c4303714c48
https://doi.org/10.4028/www.scientific.net/msf.858.829
https://doi.org/10.4028/www.scientific.net/msf.858.829
Publikováno v:
Materials Science Forum. :985-988
We found that threshold voltage (Vth) of a 4H-SiC MOSFET increases drastically by performing low temperature wet oxidation after nitridation in a gate oxide process. The increment of Vth depends on the wet oxidation conditions. Wet oxidation increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0479bc128253644f55f09450ae52157e
https://doi.org/10.4028/www.scientific.net/msf.778-780.985
https://doi.org/10.4028/www.scientific.net/msf.778-780.985
Autor:
Masayuki Imaizumi, Naoki Yutani, Toshikazu Tanioka, Masayuki Furuhashi, S. Yamakawa, Yuji Ebiike, Eisuke Suekawa, Tatsuo Oomori, Yoichiro Tarui, Naruhisa Miura, Shinji Sakai
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
The threshold voltage of 4H-SiC MOSFET increases drastically by performing wet oxidation after nitridation of gate oxide without significant decrease in the channel effective mobility. The increment of the threshold voltage depends on the wet oxidati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61fc1a19c8375e8fe41d7d8090af4bcf
https://doi.org/10.1109/ispsd.2013.6694397
https://doi.org/10.1109/ispsd.2013.6694397