Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Toshikazu Ishigaki"'
Autor:
Hiroshi Harima, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo, Noriyuki Hasuike, Jung Gon Kim, Masahiro Yoshimoto
Publikováno v:
ECS Transactions. 98:457-464
For advanced application specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used for controlling the Ge content to a desi
Publikováno v:
ECS Journal of Solid State Science & Technology; Aug2021, Vol. 10 Issue 8, p372-378, 7p
Autor:
Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shen-Min Yang, Ming-Shan Tsai, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022117-022117-11 (2012)
Multiwavelength, high resolution micro-Raman spectroscopy was applied to in-line process monitoring and diagnostics of undoped and B-doped Si1-xGex epitaxy on Si(100) device wafers. This noncontact technique was used to monitor the Ge content, B conc
Externí odkaz:
https://doaj.org/article/a08ae978fee14a61a4e03d2272d85f78
Autor:
Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shiu-Ko Jang Jian, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012124-012124-8 (2012)
Non-contact monitoring of Ge content and B concentration in single and double Si1-xGex epitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determi
Externí odkaz:
https://doaj.org/article/212d8a7e9b6b420f87ff8e4bd282227e
Autor:
Woo Sik Yoo, Kitaek Kang, Toshikazu Ishigaki, Jung Gon Kim, Noriyuki Hasuike, Hiroshi Harima, Masahiro Yoshimoto
Publikováno v:
ECS Journal of Solid State Science & Technology; 2020, Vol. 9 Issue 12, p117-128, 12p
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:086006
To investigate the effect of implantation temperature on the damage to a Si lattice, room temperature photoluminescence (PL) spectra were measured from highly-channeled MeV 11B+ implanted Si wafers with different implant temperatures (25 °C and 450
Publikováno v:
ECS Transactions. 77:235-242
Publikováno v:
2019 19th International Workshop on Junction Technology (IWJT).
Formation of high integrity junctions with low junction leakage and defects is essential for fabricating high performance devices with advanced node devices. Understanding of implant activation and implant damage recovery mechanisms during annealing
Publikováno v:
ECS Transactions. 72:199-209
Formation of low resistivity junctions is essential for fabricating high performance devices with advanced device modes. Significant effort has been expended, industry wide, to develop low resistivity junctions, over the years. However, the understan
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P3064-P3068
Wafer-to-wafer bonding is implemented in fabrication of backside illuminated (BSI) complimentary metal-oxide-semiconductor image sensor (CIS) devices in volume manufacturing. A wafer with illuminated imager and a wafer with readout and image processi