Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Toshikage Asakura"'
Autor:
Ryuichi Takahashi, Tamaki Nakano, Hisatoshi Kura, Keita Tanaka, Hitoshi Yamato, Toshikage Asakura
Publikováno v:
Journal of Photopolymer Science and Technology. 27:227-230
Publikováno v:
Journal of Photopolymer Science and Technology. 22:89-95
Extreme Ultraviolet (EUV) has already achieved the initial requirements for 32 nm DRAM half pitch lithography rule and is known as one of the most promising next generation lithography techniques to be realized for 22 nm patterning technology though
Publikováno v:
Journal of Photopolymer Science and Technology. 21:377-381
So far, we have developed and reported a series of novel oxime sulfonate type of photoacid generators (PAG) composed of a fluorenyl chromophore like 2-[2,2,3,3,4,4,5,5-octafluoro-1-(nonafluorobutylsulfonyloxyimino)-pentyl]-fluorene (ONPF), which gene
Autor:
Akira Matsumoto, Yuichi Nishimae, Tobias Hinterman, Junichi Tanabe, Jean-Luc Birbaum, Masaki Ohwa, Toshikage Asakura, Peter Murer, Hitoshi Yamamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 20:637-642
Oxime sulfonate compounds are one of the important chemistry as photoacid generator for advanced lithography application and practically used in mass production of semiconductor chips. This chemistry is adjustable for various applications like g-/h-/
Publikováno v:
Journal of Photopolymer Science and Technology. 20:465-471
Recently we have developed and reported some novel non-ionic photoacid generators (PAGs) which generate a strong acid (perfluorobutanesulfonic acid) by light irradiation and is applicable to chemically amplified ArF photoresist, such as 2-[2,2,3,3,4,
Publikováno v:
Journal of Photopolymer Science and Technology. 19:335-342
Publikováno v:
Journal of Photopolymer Science and Technology. 16:335-345
Recently we have developed new class of non-ionic oxime sulfonate PAG. The compounds generate various kinds of sulfonic acids, such as n-propane, n-octane, camphor and p-toluene sulfonic acid under Deep-UV exposure and trifluoromethanesulfonic acid u
Publikováno v:
Journal of Photopolymer Science and Technology. 13:223-230
A new class of compounds which are non-ionic and halogen-free photo acid generators applicable for g-line, i-line and DUV photoresists is reported. The compounds exhibit high solubility in PGMEA, thermal stability in a phenolic polymer matrix up to 1
Autor:
Hitoshi Yamato, Kenichiro Kai, Takafumi Koshiba, Masaki Ohwa, Toshikage Asakura, Wolfgang Wernet
Publikováno v:
Synthetic Metals. 83:125-130
Electrochemical polymerization of 3,4-ethylenedioxythiophene (EDT) was carried out in the presence of monomeric anions or polyanions in electrolyte solutions. While no free-standing films of poly (3,4-ethylenedioxythiophene) (PEDT) were obtained usin
Publikováno v:
Chemistry Letters. 20:1105-1108
Two methacrylates with a biphenyl moiety as a mesogenic group were anionically polymerized with t-butylmagnesium bromide in toluene, chloroform, and tetrahydrofuran at low temperature. Differential scanning calorimetric analysis of the highly isotact