Zobrazeno 1 - 10
of 176
pro vyhledávání: '"Toshihiro Sugii"'
Publikováno v:
AIP Advances, Vol 7, Iss 6, Pp 065105-065105-6 (2017)
We have investigated the effects of in-situ post-oxidation (PO) of a sputtered MgO barrier in a double-MgO-barrier magnetic tunnel junction (MTJ) and found that the short error rate was significantly reduced, the magnetoresistance (MR) ratio was incr
Externí odkaz:
https://doaj.org/article/24102849bab243c49e8b33ebb6afd28a
Autor:
Chikako Yoshida, Hideyuki Noshiro, Yuichi Yamazaki, Toshihiro Sugii, Tomohiro Tanaka, Atsushi Furuya, Yuji Uehara
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 055935-055935-5 (2017)
The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ) has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P) to anti-paral
Externí odkaz:
https://doaj.org/article/1d147877fa7647ddb28f26261beaa1af
Autor:
Chikako Yoshida, Hideyuki Noshiro, Yuichi Yamazaki, Toshihiro Sugii, Atsushi Furuya, Tadashi Ataka, Tomohiro Tanaka, Yuji Uehara
Publikováno v:
AIP Advances, Vol 6, Iss 5, Pp 055816-055816-5 (2016)
The electric-field (E) dependence of the magnetoresistance (RH) loops for top-pinned perpendicular CoFeB/MgO-based magnetic tunnel junctions (MTJs) in the presence of a spin-transfer torque (STT)-current was measured. The E effects were distinguished
Externí odkaz:
https://doaj.org/article/8cc9e999445e41d9af3ec155756ad93d
Autor:
Toshihiro Sugii
Publikováno v:
Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices ISBN: 9781003208860
Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices
Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49ca93cbc68ab9008fe90ee6b0b33a7e
https://doi.org/10.1201/9781003208860-9
https://doi.org/10.1201/9781003208860-9
Publikováno v:
MRS Advances. 2:259-264
We proposed an MgO barrier which is fabricated by combination of rf-sputter deposition of MgO film and subsequent in-situ post oxidation (PO). We found that the perpendicular magnetic anisotropy (PMA) of the CoFeB layer formed on this MgO barrier wit
Autor:
Koji Yanagida, Yohei Umeki, Koji Tsunoda, Hiroshi Kawaguchi, Shusuke Yoshimoto, Shintaro Izumi, Masahiko Yoshimoto, Toshihiro Sugii
Publikováno v:
IPSJ Transactions on System LSI Design Methodology. 9:79-83
The capacity of embedded memory on LSIs has kept increasing. It is important to reduce the leakage power of embedded memory for low-power LSIs. In fact, the ITRS predicts that the leakage power in embedded memory will account for 40% of all power con
Autor:
Koji Yanagida, Masahiko Yoshimoto, Shusuke Yoshimoto, Shintaro Izumi, Toshihiro Sugii, Koji Tsunoda, Yohei Umeki, Hiroshi Kawaguchi
Publikováno v:
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. 97(12):2411-2417
Autor:
Hideyuki Noshiro, Koji Tsunoda, Toshihiro Sugii, Chikako Yoshida, Y. Yamazaki, Masaaki Nakabayashi, Haruka Uehara, Yoshihisa Iba, Atsushi Takahashi, Masaki Aoki, Takashi Takenaga, Akiyoshi Hatada
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
We found that the offset field (H off ) of a top-pinned magnetic tunnel junction (MTJ) with a CoPd/Ru/Ta/CoFeB-synthetic antiferromagnetic (SAF) free layer can be reduced by controlling the exchange coupling energy (J ex ) value. A micromagnetic simu
Autor:
Y. Yamazaki, Chikako Yoshida, Masaaki Nakabayashi, Atsushi Takahashi, Takashi Takenaga, Akiyoshi Hatada, Masaki Aoki, Hideki Noshiro, Koji Tsunoda, Yoshihisa Iba, Toshihiro Sugii
Publikováno v:
IEEE Transactions on Magnetics. 49:4363-4366
Synthetic antiferromagnetic (SAF) free layers consisting of [Co (0.3 nm)/Pd (0.7 nm)]n/Ru/Ta/CoFeB were investigated for use in the free layers of top-pinned magnetic tunnel junctions (MTJs). We found that interlayer exchange coupling properly provid
Autor:
Takashi Takenaga, Atsushi Takahashi, Y. Yamazaki, Toshihiro Sugii, Masaki Aoki, Akiyoshi Hatada, Yoshihisa Iba, Koji Tsunoda, H. Ohji, Chikako Yoshida, Hideyuki Noshiro, T. Furukawa, Masaaki Nakabayashi
Publikováno v:
IEEE Transactions on Magnetics. 49:3878-3881
We applied Co20Fe60B20 layers with thicknesses from 1.2 to 1.5 nm to the sensing layers of MgO based magnetic tunnel junctions (MTJs) with spin-valve-type structures annealed at 350 °C for magnetic field sensors. The CoFeB layer on MgO had in-plane