Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Toshihiko P. Tanaka"'
Publikováno v:
Journal of Photopolymer Science and Technology. 7:23-30
Azide-phenol resin resist is applied to a trilayer resist system for KrF excimer lithography. It was found that smaller size patterning below 0.2-μm-level limit the film thickness to 0.5μm of bottom layer due to pattern collapse and micro-loading d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e3bee7f6fdeadb76111e9654aadbe3
https://doi.org/10.2494/photopolymer.7.23
https://doi.org/10.2494/photopolymer.7.23
Autor:
Kyoko Kojima, Toshihiko P. Tanaka, Shou-ichi Uchino, Sonoko Migitaka, Jiro Yamamoto, Takumi Ueno
Publikováno v:
Journal of Photopolymer Science and Technology. 8:607-609
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::542c8c1c9d67ad97e8e764468be16314
https://doi.org/10.2494/photopolymer.8.607
https://doi.org/10.2494/photopolymer.8.607
Publikováno v:
SPIE Proceedings.
A negative resist system utilizing acid-catalyzed intramolecular esterification of (delta) -hydroxy acid has been developed for ArF phase-shifting lithography. The system is made up of an acrylate polymer with pendant structure of androsterone deriva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73bc29e8d4e202c09b083b4ca0a04f4d
https://doi.org/10.1117/12.436901
https://doi.org/10.1117/12.436901
Publikováno v:
Advances in Resist Technology and Processing XVII.
We have investigated the mechanical porperty of ArF resists formed on Si substrate. We measured strength in resist film by introducing the scratch test method. Stress is also evaluated by measuring the curvature of Si wafer coated with resist. The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bc2f96d5597604a07205d4fe4772449
https://doi.org/10.1117/12.388262
https://doi.org/10.1117/12.388262
Suppression of resist pattern deformation on SiON bottom antireflective layer in deep-UV lithography
Autor:
Tsuneo Terasawa, Toshihiko P. Tanaka, Toshiyuki Mine, Ryoko Yamanaka, Keiko Hattori, Takashi Hattori
Publikováno v:
SPIE Proceedings.
The interaction between a chemical amplification (CA) resist and a bottom anti-reflective layer (BARL) was clarified to find ways to suppress the resist pattern deformation in the BARL. A SiON film, which is a candidate for use as a BARL material, wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1862f5dbd48840cd284f705e677b26bf
https://doi.org/10.1117/12.350202
https://doi.org/10.1117/12.350202
Autor:
Michiaki Hashimoto, Fumio Murai, Sonoko Migitaka, Shou-ichi Uchino, Jiro Yamamoto, Hiroshi Shiraishi, Takumi Ueno, Toshihiko P. Tanaka
Publikováno v:
SPIE Proceedings.
A high-contrast resist, called a contrast boosted resist (CBR), using a water-repellent compound that changes into hydrophilic compounds during aqueous base development has been developed for electron-beam (EB) lithography. TBAB, 1,3,5-tris(bromoacet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f25fc2b4df6cc85a4e6930d56118d5c
https://doi.org/10.1117/12.241842
https://doi.org/10.1117/12.241842
Publikováno v:
SPIE Proceedings.
A new concept using the bottom antireflection layer with graded photoabsorption named GALA (gradient absorption layer) is described to resolve the problems with conventional antireflection methods, such as insufficient antireflection, substrate mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::effa056d53f2a55f480b97698bda0d56
https://doi.org/10.1117/12.240926
https://doi.org/10.1117/12.240926
Publikováno v:
SPIE Proceedings.
Resolution-enhancement technologies such as phase-shifting masks (PSMs) and modified illumination are currently critical issues in optical lithography. Because the most effective way to obtain higher resolution is by using PSM technology, we have exa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ef885aef9cf78e24e4b60be2839dbe
https://doi.org/10.1117/12.212800
https://doi.org/10.1117/12.212800
Publikováno v:
SPIE Proceedings.
A variable phase-shift mask for optical lithography, which gives several kinds of optical phase shifting to light transmitted through the mask apertures, is proposed, and image quality obtained with this mask is investigated. Clear regions with some
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ebfc91d147325c592941f941ec3c91
https://doi.org/10.1117/12.44782
https://doi.org/10.1117/12.44782
Publikováno v:
Optical Engineering. 35:2970
Resolution-enhancement technologies such as alternatingtype phase-shifting masks (PSMs), half-tone PSMs, and the off-axis illumination method in optical lithography are necessary for manufacturing gigabit-scale ultra large scale integration (ULSI) de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468aa901eac036e3789d52807dda0050
https://doi.org/10.1117/1.600980
https://doi.org/10.1117/1.600980