Zobrazeno 1 - 10
of 240
pro vyhledávání: '"Toshihiko Kanayama"'
Autor:
Hitoshi Yamamura, Yuji Ohishi, Yukari Katsura, Kaoru Kimura, Noriyuki Uchida, Toshihiko Kanayama
Publikováno v:
AIP Advances, Vol 9, Iss 11, Pp 115117-115117-10 (2019)
Ab initio molecular orbital calculations are performed for B13−, Al13−, B12H122−, Al12H122−, Si10, and Si10H16 clusters. The highest occupied molecular orbital (HOMO) of stable and unstable clusters is bonding and antibonding orbitals, respec
Externí odkaz:
https://doaj.org/article/b0c659737c2540b78ffd13152d357cb0
Autor:
So Ito, Hirotaka Kikuchi, Yuanliu Chen, Yuki Shimizu, Wei Gao, Kazuhiko Takahashi, Toshihiko Kanayama, Kunmei Arakawa, Atsushi Hayashi
Publikováno v:
Applied Sciences, Vol 6, Iss 5, p 156 (2016)
This paper presents a micro-coordinate measuring machine (micro-CMM) for large-scale dimensional measurement of a micro-slit on a precision die coater by using a shear-mode micro-probe. A glass micro sphere with a nominal diameter of 52.3 μm was att
Externí odkaz:
https://doaj.org/article/6190bccdf362413fa912df340b6f1ee7
Publikováno v:
ECS Transactions. 89:155-164
Reduction of electrical resistance of middle-of-line (MOL) is now a primary requirement for advanced CMOS. In this paper, we demonstrate that the cluster-preforming-deposited (CPD) WSin (n ≤ 12) film is a promising contact material for S/D in CMOS;
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6efdc90171c538932a9ffe10c2d7705e
https://doi.org/10.1149/08903.0155ecst
https://doi.org/10.1149/08903.0155ecst
Thermal stability of amorphous Si-rich W silicide films composed of W-atom-encapsulated Si clusters.
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 22, p1-5, 5p, 2 Color Photographs, 1 Chart, 4 Graphs
Publikováno v:
Journal of Chemical Physics; 2016, Vol. 144 Issue 8, p084703-1-084703-6, 6p, 1 Diagram, 1 Chart, 6 Graphs
Autor:
Toshihiko Kanayama
Publikováno v:
Vacuum and Surface Science. 64:61-61
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e63ffadd003c1df0023ee9b9ce0f15
https://doi.org/10.1380/vss.64.61
https://doi.org/10.1380/vss.64.61
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 9, p095302-1-095302-7, 7p, 3 Diagrams, 1 Chart, 9 Graphs
Autor:
Toshihiko Kanayama
Publikováno v:
Japanese Journal of Applied Physics. 59:096504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12de89647ab331ce9e54980b6e3b0a39
https://doi.org/10.35848/1347-4065/abad80
https://doi.org/10.35848/1347-4065/abad80
Publikováno v:
Applied Physics Express. 13:061005
The capacitance–voltage characteristics of MOS capacitors and ab initio theoretical calculations revealed that an amorphous film composed of WSin clusters (n = 6−12) had a low effective work function of 4.0 eV on SiO2 with excellent thermal stabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db27a586d7e3920e62c9f5f1b2c2346f
https://doi.org/10.35848/1882-0786/ab8d49
https://doi.org/10.35848/1882-0786/ab8d49
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a730df075c8bf492388da9ee3f10a2a6
https://doi.org/10.7567/ssdm.2018.ps-1-23
https://doi.org/10.7567/ssdm.2018.ps-1-23