Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Toshiharu Nakashima"'
Autor:
Ryoji Hirano, Takuto Emura, Otoichi Nakata, Toshiharu Nakashima, Miyako Asai, Kuriko Kagitani-Shimono, Haruhiko Kishima, Masayuki Hirata
Publikováno v:
IEEE Transactions on Medical Imaging. 41:2879-2890
Magnetoencephalography (MEG) is a useful tool for clinically evaluating the localization of interictal spikes. Neurophysiologists visually identify spikes from the MEG waveforms and estimate the equivalent current dipoles (ECD). However, presently, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90a2e8b31f5ad9db94c5c92cb6c896f9
https://doi.org/10.1109/tmi.2022.3173743
https://doi.org/10.1109/tmi.2022.3173743
Autor:
Yohei Takase, Yukio Koizumi, Susumu Isago, Hironori Ikezawa, Takahisa Kikuchi, Satoshi Ishiyama, Toshiharu Nakashima, Minoru Onda, Yasuhiro Kitamura, Daisuke Inoue, Hidetaka Kawahara, Yasuhiro Ohmura, Akimasa Nagahiro, Hasegawa Keisuke, Tsuge Yosuke, Toru Hirayama
Publikováno v:
SPIE Proceedings.
High throughput with high resolution imaging has been key to the development of leading-edge microlithography. However, management of thermal aberrations due to lens heating during exposure has become critical for simultaneous achievement of high thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::facf50de45c7da0f53912ae2804f4cd6
https://doi.org/10.1117/12.2218840
https://doi.org/10.1117/12.2218840
Publikováno v:
SPIE Proceedings.
In optical lithography, high-performance exposure tools are necessary to obtain not only fine patterns but also preciseness of the pattern width. Therefore, an accurate theoretical method is necessary to predict these values in practice. Conversely s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7661bb08f793daa240e727fa40ae39c2
https://doi.org/10.1117/12.2085454
https://doi.org/10.1117/12.2085454
Autor:
Tomoyuki Matsuyama, Toshiharu Nakashima, Masayuki Murayama, Hajime Yamamoto, Katsushi Makino, Ayako Sukegawa, Naonori Kita, Kazuo Masaki, Shintaro Kudo, Junji Ikeda, Hajime Aoyama, Ryota Matsui, Taro Ogata
Publikováno v:
SPIE Proceedings.
Due to the importance of errors in lithography scanners, masks, and computational lithography in low-k1 lithography, application software is used to simultaneously reduce them. We have developed “Masters” application software, which is all-inclus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::002b098c421495278258d9ef6e6e8e65
https://doi.org/10.1117/12.2046547
https://doi.org/10.1117/12.2046547
Publikováno v:
Journal of Micro/Nanolithography, MEMS & MOEMS; Apr-Jun2016, Vol. 15 Issue 2, p021206-1-021206-10, 10p
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:021206
In optical lithography, high-performance exposure tools are indispensable to obtain not only fine patterns but also preciseness in pattern width. Since an accurate theoretical method is necessary to predict these values, some pioneer and valuable stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba29aa6824d1102527d46e32869f2e5c
https://doi.org/10.1117/1.jmm.15.2.021206
https://doi.org/10.1117/1.jmm.15.2.021206
Publikováno v:
SPIE Proceedings.
Due to the extremely small process window in the 32nm feature generation and beyond, it is necessary to implement active techniques that can expand the process window and robustness of the imaging against various kinds of imaging parameters. Source &
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::316eb09ee775f9906927a6729319b33e
https://doi.org/10.1117/12.846639
https://doi.org/10.1117/12.846639
Publikováno v:
SPIE Proceedings.
In low-k1 lithography, it is difficult to keep pattern fidelity and contrast for all features in one layer. Source mask optimization (SMO) software provide solutions to keep pattern fidelity and contrast for the selected critical patterns. We have de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6114626391ca5472e25df695abecee5e
https://doi.org/10.1117/12.837161
https://doi.org/10.1117/12.837161
Publikováno v:
SPIE Proceedings.
Optical imaging of IC critical designs is impacted by optical proximity effects, OPEs, originating from finite numerical aperture of projection lenses used in modern projectors. The OPE's are caused by filtering of pattern diffraction orders falling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf45b1f78139d26abc817bb0f17cad61
https://doi.org/10.1117/12.810850
https://doi.org/10.1117/12.810850
Publikováno v:
SPIE Proceedings.
The k1 factor continues to be driven downwards, in order to enable the 32 nm feature generation and beyond. Due to the extremely small process window that will be available for such demanding imaging challenges, it is necessary not only for each unit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b6e8a6f20bb54c7a85e2bed920d86ba
https://doi.org/10.1117/12.813400
https://doi.org/10.1117/12.813400