Zobrazeno 1 - 10
of 201
pro vyhledávání: '"Toshiharu Makino"'
Autor:
Hodaka Kurokawa, Keidai Wakamatsu, Shintaro Nakazato, Toshiharu Makino, Hiromitsu Kato, Yuhei Sekiguchi, Hideo Kosaka
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract The coherent control of the orbital state is crucial for realizing the extremely-low power manipulation of the color centers in diamonds. Herein, a neutrally-charged nitrogen-vacancy center, NV0, is proposed as an ideal system for orbital co
Externí odkaz:
https://doaj.org/article/2f7db1d7353747ad8625a86603549a03
Autor:
Xufang Zhang, Tsubasa Matsumoto, Mitsuru Sometani, Masahiko Ogura, Hiromitsu Kato, Toshiharu Makino, Daisuke Takeuchi, Takao Inokuma, Satoshi Yamasaki, Norio Tokuda
Publikováno v:
AIP Advances, Vol 14, Iss 3, Pp 035323-035323-6 (2024)
Our group developed the first inversion-type p-channel diamond metal–oxide–semiconductor field-effect transistor, which featured normally off properties by employing water vapor annealing treatments for the oxygen-terminated diamond surface. Desp
Externí odkaz:
https://doaj.org/article/a835b7ffacdd4640a4efe9ebfaf102fd
Autor:
Hodaka Kurokawa, Keidai Wakamatsu, Shintaro Nakazato, Toshiharu Makino, Hiromitsu Kato, Yuhei Sekiguchi, Hideo Kosaka
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/215bb423eb704bb19ab40c9373313e74
Autor:
Takayuki Iwasaki, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 95-99 (2017)
High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical
Externí odkaz:
https://doaj.org/article/dac16a652fc2436188143c5d33dc5d80
Autor:
Tadashi Masumura, Hitoshi Umezawa, Takahiro Yamaguchi, Yusei Deguchi, Hiroyuki Kawashima, Toshiharu Makino, Naohisa Hoshikawa, Hitoshi Koizumi, Junichi H. Kaneko
Publikováno v:
Diamond and Related Materials. 135:109825
Autor:
Masanori Fujiwara, Masahiro Fujie, E. D. Herbschleb, Norikazu Mizuochi, A. Watanabe, Haruhisa Kato, T. Nishikawa, Toshiharu Makino, Satoshi Yamasaki
Publikováno v:
Carbon. 178:294-300
Creation of nitrogen-vacancy (NV) centers at the nanoscale surface region in diamond, while retaining their excellent spin and optical properties, is essential for applications in quantum technology. Here, we demonstrate the extension of the spin-coh
Autor:
Riku Kawase, Hiroyuki Kawashima, Hiromitsu Kato, Norio Tokuda, Satoshi Yamasaki, Masahiko Ogura, Toshiharu Makino, Norikazu Mizuochi
The longest spin coherence times for nitrogen-vacancy (NV) centers at room temperature have been achieved in phosphorus-doped n-type diamond. However, difficulty controlling impurity incorporation and the utilization of highly toxic phosphine gas in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84f0a3c31b7ff1999bdc2576061dafdf
http://arxiv.org/abs/2205.15539
http://arxiv.org/abs/2205.15539
Autor:
Takao Inokuma, Hitoshi Noguchi, Satoshi Yamasaki, Tsubasa Matsumoto, Hiromitsu Kato, Xufang Zhang, Christoph E. Nebel, Masahiko Ogura, Toshiharu Makino, Daisuke Takeuchi, Yuta Nakano, Norio Tokuda
Publikováno v:
Carbon. 175:615-619
We successfully fabricated the inversion-type p-channel metal–oxide–semiconductor field-effect transistor (MOSFET) on heteroepitaxially grown free-standing diamond using silicon-based substrates. The drain current–drain voltage (Ids–Vds) and
Autor:
Moriyoshi Haruyama, Yuki Okigawa, Mitsuhiro Okada, Hideaki Nakajima, Toshiya Okazaki, Hiromitsu Kato, Toshiharu Makino, Takatoshi Yamada
Publikováno v:
Applied Physics Letters. 122:141601
We studied the charge-state stabilization of shallow nitrogen-vacancy (NV) centers in (111) diamond using graphene/diamond junctions. Measurement of the fluorescence stability and evaluation of the charge-state stability were conducted on the NV cent
Autor:
Takao Inokuma, Tsubasa Matsumoto, Hiroshi Yano, Mitsuru Sometani, Dai Okamoto, Masahiko Ogura, Xufang Zhang, Noriyuki Iwamuro, Satoshi Yamasaki, Ukyo Sakurai, Toshiharu Makino, Norio Tokuda
Publikováno v:
Carbon. 168:659-664
In our previous work, we demonstrated the world’s first inversion-type p-channel diamond metal–oxide–semiconductor field-effect transistor (MOSFET). However, it exhibited low channel mobility due to high interface state density (Dit). In this s