Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Toshifumi Imamura"'
Autor:
Hiroyuki Ito, Mitsutoshi Sugawara, Michimasa Yamaguchi, Shinsuke Sasada, Yoshitaka Murasaka, Tomoaki Maeda, Atsushi Iwata, Masahiro Ono, Tsuyoshi Matsumaru, Yoshihiro Masui, Toshifumi Imamura, Akihiro Toya, Takuichi Hirano, Takamaro Kikkawa, Afreen Azhari, Hang Song
Publikováno v:
IEEE Transactions on Biomedical Circuits and Systems. 14:1333-1345
A single-chip Gaussian monocycle pulse (GMP) transceiver was developed for radar-based microwave imaging by the use of 65-nm complementary metal oxide semiconductor (CMOS) technology. A transmitter (TX) generates GMP signals, whose pulse widths and -
Autor:
Akihiro Toya, Takamaro Kikkawa, Atsushi Iwata, Masahiro Ono, Hiroyuki Ito, Mitsutoshi Sugawara, Yoshitaka Murasaka, Yoshihiro Masui, Toshifumi Imamura, Tomoaki Maeda
Publikováno v:
BioCAS
An equivalent time sampling circuit has been developed for impulse-radio ultra-wideband radar systems. The received signals are digitized by a shifting clock. The accuracy of the clock that affects the sampling interval of analog-to-digital converter
Autor:
Yoshimasa Ono, Toshifumi Imamura, Y. Onuki, A. Ishikawa, Takafumi Ohmoto, Atsushi Iwata, T. Tsuboyama, Hitoshi Yamamoto, Yasuo Arai
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 731:266-269
A Silicon-On-Insulator (SOI) Technology is suitable for vertex detectors for high energy physics experiments since complex functions can be fabricated on the SOI wafer with a small amount of material thanks to the monolithic structure. We developed a
Autor:
Takeshi Go Tsuru, Syukyo G. Ryu, Takafumi Ohmoto, Atsushi Iwata, Toshifumi Imamura, Shinya Nakashima, Takaaki Tanaka, Ayaki Takeda, Yasuo Arai
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 731:74-78
We have been developing active pixel sensors based on silicon-on-insulator technology for future X-ray astronomy missions. Recently we fabricated the new prototype named “XRPIX2”, and investigated its spectroscopic performance. For comparison and
Autor:
Yasuo Arai, Syukyo G. Ryu, Takeshi Go Tsuru, Atsushi Iwata, Toshifumi Imamura, Shinya Nakashima, Ayaki Takeda, Takafumi Ohmoto
Publikováno v:
IEEE Transactions on Nuclear Science. 60:586-591
We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite missions. This sensor is called XRPIX. Our objective is to replace the X-ray CCD, which is cur
Autor:
Beverly LaMarr, Atsushi Iwata, Shinya Nakashima, R. Foster, Takafumi Ohmoto, Ayaki Takeda, Gregory Y. Prigozhin, Takeshi Go Tsuru, Toshifumi Imamura, Steven E. Kissel, Syukyo G. Ryu, Yasuo Arai, Marshall W. Bautz
Publikováno v:
IEEE Transactions on Nuclear Science. 60(1):465-469
We have been developing monolithic active pixel sensors with 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for high-speed wide-band X-ray imaging spectroscopy on future astronomical satellites. In this work, we investigate a revi
Autor:
Atsushi Iwata, Yasuo Arai, Toshinobu Miyoshi, Takafumi Ohmoto, Syukyo G. Ryu, R. Ichimiya, Shinya Nakashima, Toshifumi Imamura, Ayaki Takeda, Takeshi Go Tsuru, Y. Ikemoto
Publikováno v:
Physics Procedia. 37:1373-1380
We have been developing an active pixel sensor for X-ray astronomy. In this paper, we report on the design and the characterizationof the recently-developed device named XRPIX1-FZ.We applied the high-resistivitySiwafer(∼7 kΩ cm) to the sensor laye
Publikováno v:
Journal of the City Planning Institute of Japan. 47:385-390
Autor:
Takafumi Ohmoto, Syukyo G. Ryu, Takeshi Go Tsuru, Shinya Nakashima, Atsushi Iwata, Yoshio Arai, Hironori Matsumoto, Ayaki Takeda, Y. Ikemoto, R. Ichimiya, Toshinobu Miyoshi, Toshifumi Imamura
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2528-2536
We have been developing a monolithic active pixel sensor with the 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for the wide-band X-ray imaging spectroscopy on future astronomical satellites. SOIPIX includes a thin CMOS-readout-a
Autor:
Takafumi Ohmoto, Toshifumi Imamura, Hideki Hamagaki, Atsushi Iwata, Yoshio Arai, Y. Sekiguchi, Taku Gunji
Publikováno v:
2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC).
We have developed a monolithic pixel detector with the silicon-on-insulator (SOI) pixel CMOS technology to use as radiation monitor, called RADPIX. The RADPIX intends to identify the type of radiation (α, β, γ, muon, etc.) by differences in hit pa