Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Toshifumi Imajo"'
Autor:
Kenta Moto, Kaoru Toko, Tomonari Takayama, Toshifumi Imajo, Takamitsu Ishiyama, Keisuke Yamamoto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 553-558 (2023)
Fermi-level pinning (FLP) at the metal/Ge interface makes it difficult to control the Schottky barrier height, which forces an ohmic behavior on p-Ge and a rectifying behavior on n-Ge. This study first demonstrates the rectifying behavior on polycrys
Externí odkaz:
https://doaj.org/article/d2accce794694fdbadb6e3a924864d52
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 2, Iss 1, Pp 213-221 (2022)
Material informatics is being applied to crystal engineering, which is a core technology in electronics. Micrographs particularly provide important insights; however, they have not benefited significantly from material informatics because of the effo
Externí odkaz:
https://doaj.org/article/dce0e4b1778242e2868544a9099c3421
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Polycrystalline Ge thin films have recently attracted renewed attention as a material for various electronic and optical devices. However, the difficulty in the Fermi level control of polycrystalline Ge films owing to their high density of d
Externí odkaz:
https://doaj.org/article/d036976c129b4324a8b320630386ddc2
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
Abstract Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal a
Externí odkaz:
https://doaj.org/article/6be6c68941b4463b80afec4cd4a2e62f
Autor:
Takamitsu Ishiyama, Toshifumi Imajo, Noriyuki Saitoh, Noriko Yoshizawa, Takashi Suemasu, Kaoru Toko
Publikováno v:
Crystal Growth & Design. 22:1123-1129
Autor:
Toshifumi Imajo, Takamitsu Ishiyama, Noriyuki Saitoh, Noriko Yoshizawa, Takashi Suemasu, Kaoru Toko
Publikováno v:
ACS Applied Electronic Materials. 4:269-275
Autor:
Keisuke Yamamoto, Kenta Moto, Kaoru Toko, Toshifumi Imajo, Takashi Suemasu, Hiroshi Nakashima
Publikováno v:
IEEE Electron Device Letters. 42:1735-1738
Thin-film transistor (TFT) applications of GeSn have attracted attention as a means of improving the performance of electronic devices. Based on our advanced solid-phase crystallization and TFT process technologies, we comprehensively studied the rel
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
Scientific Reports
Scientific Reports
Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electr
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.