Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Toshifumi Hashimoto"'
Autor:
Yasuyuki Kajitani, Kazushige Kanda, Manabu Sato, Takahiro Shimizu, Hiroshi Sugawara, Junji Musha, Yee Lih Koh, Tomoki Nakagawa, Kazuaki Kawaguchi, Takahiro Sugimoto, Koji Hosono, Jumpei Sato, Mario Sako, Yusuke Ochi, Tomoaki Nakano, Katsuaki Sakurai, Ryo Fukuda, Ryoichi Tachibana, Naoki Kobayashi, Juan Lee, Hiroki Date, Hiroaki Nasu, Koichi Kawakami, Makoto Miakashi, Dai Nakamura, Yuuki Matsumoto, Jieyun Zhou, Shuo Chen, Tadashi Someya, Hiroshi Nakamura, Kosuke Yanagidaira, Namasivayam Raghunathan, Takeshi Ogawa, M. Kojima, Masami Masuda, Toshifumi Hashimoto, Jun Nakai, Takahisa Kawabe, Taira Shibuya, Masatsugu Ogawa, Osamu Nagao, Takahiro Yamashita, Teruo Takagiwa, Toshiki Hisada, Tomoharu Hashiguchi, Yasushi Nagadomi, Mizuki Uda, Noboru Shibata, Takatoshi Minamoto
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:178-188
A 1.33-Tb 4-bit/cell quadruple-level (QLC) 3-D flash memory in a 96-word-line (WL)-layer technology that achieves 8.5 Gb/mm2 has been developed. This is the biggest capacity and the highest bit density ever reported. A source-bias-negative-sense with
Autor:
Siddhesh Darne, Teruo Takagiwa, Junya Matsuno, Yuki Shimizu, Naoya Tokiwa, Kei Shiraishi, Tetsuaki Utsumi, Hiroyuki Mizukoshi, Koji Hosono, Masatsugu Kojima, Junji Musha, Takuyo Kodama, Osamu Kobayashi, Masahiro Kano, Takeshi Hioka, Naoki Ookuma, Yuki Kuniyoshi, Takahiro Sugimoto, Ryoichi Tachibana, Hiroshi Sugawara, Hiroki Date, Kazuhide Yoneya, Srinivas Rajendra, Akira Arimizu, Yoshito Katano, Mitsuhiro Abe, Keiji Tsunoda, Masakazu Ehama, Toshifumi Hashimoto, Tianyu Tang, Tomofumi Fujimura, Ryo Fukuda, Jason Li, Hiroshi Maejima, Shintaro Hayashi, Akio Sugahara, Kei Akiyama, Koji Kato, Toru Miwa, Kensuke Yamamoto, Masahiro Yoshihara, Katsuaki Sakurai, Itaru Yamaguchi, Tsutomu Higuchi, Mizuki Kaneko, Jumpei Sato, Kazumasa Yamamoto, Yasuhiro Suematsu, Mitsuyuki Watanabe, Ryuji Yamashita, Venky Ramachandra, Kosuke Yanagidaira, Jiwang Lee, Kazuko Inuzuka, Hirotoshi Mori, Takatoshi Minamoto, Tomoharu Hashiguchi, Mitsuaki Honma, Juan Lee
Publikováno v:
ISSCC
This work demonstrates a novel 1Tb 3D Flash memory chip that has an area efficiency of 10.4Gb/mm2 in a 3b/cell technology. Using a circuit under array (CUA) design technique and over 170 word-line (WL) layers, the chip achieves 33% higher bit density
Autor:
J. Zhou, Teruo Takagiwa, Toshifumi Hashimoto, Y. Ochi, Toshiki Hisada, Mario Sako, Takahiro Yamashita, M. Uda, Takatoshi Minamoto, Hiroshi Sugawara, T. Kawabe, Noboru Shibata, N. Raghunathan, Junichi Sato, Koji Hosono, Osamu Nagao, T. Ogawa, Naoki Kobayashi, T. Someya, Shuo Chen, Ryo Fukuda, Koichi Kawakami, H. Date, Makoto Miakashi, Y. Matsumoto, Takahiro Shimizu, M. Sato, J. Nakai, Naohito Morozumi, M. Ogawa, Tomoharu Hashiguchi, Tomohiro Sugimoto, H. Takamoto, T. Nakano, T. Nakagawa, Masami Masuda, T. Shibuya, M. Kojima, Hiroshi Nakamura, H. Nasu, Kosuke Yanagidaira, Kiyofumi Sakurai, Yasushi Nagadomi, Kazuaki Kawaguchi, Yasuyuki Kajitani, Kazushige Kanda, Junji Musha, Ryoichi Tachibana, T. Kaneko, Y. L. Koh, Juan Lee, Dai Nakamura
Publikováno v:
ISSCC
Since 3D-Flash memory took over for 2D-Flash memory, chip capacity has continuously improved [1]–[3]. In the 2D-Flash era, 2b/cell (MLC) offered higher performance and reliability, while a 3b/cell (TLC) offered the lowest cost. Thanks to a larger f
Autor:
Katsuaki Sakurai, Feng Lu, Kenro Kubota, Hiroshi Sugawara, Yoshihiko Shindo, Steve Choi, Junji Musha, Yusuke Ochi, Hao Nguyen, Hiroshi Nakamura, Yee Koh, Yasuhiro Suematsu, Ryo Fukuda, Tomoko Nishiuchi, Spiros Georgakis, Keyur Payak, Masatsugu Kojima, Sanad Bushnaq, Naoki Kobayashi, Kwang-ho Kim, Hiroe Minagawa, Manabu Sato, Yuuki Shimizu, Naoaki Kanagawa, Susumu Fujimura, Teruo Takagiwa, Kenichi Abe, Takahiro Shimizu, Toshiki Hisada, Taichi Wakui, Hiroshi Maejima, Susumu Ozawa, Makoto Miakashi, Srinivas Rajendra, Kazushige Kanda, Hiroshi Yoshihara, Namas Raghunathan, Akihiro Imamoto, Koji Hosono, Dong He, Satoshi Inoue, Masatsugu Ogawa, Seungpil Lee, Jumpei Sato, Fumihiro Kono, Yuui Shimizu, Kazuhiko Satou, Takuya Futatsuyama, Venky Ramachandra, Naohito Morozumi, Weihan Wang, Tomoharu Hashiguchi, Hicham Haibi, Noboru Shibata, Takatoshi Minamoto, Xu Li, Kouichirou Yamaguchi, Toshifumi Hashimoto, Takahiro Yamashita, Ken Cheah, Mitsuhiro Abe, Tetsuya Kaneko, Tadashi Yasufuku, Takahiro Sugimoto
Publikováno v:
ISSCC
The first multi-layer stacked 3D Flash memory was proposed as BiCS FLASH in 2007 [1]. Since then, memory bit density has grown rapidly due to the increase in the number of stacked layers from continuous 3D technology innovations. On the other hand, t
Autor:
Hong Ding, T. Pham, Takahiro Shimizu, Junji Musha, H. Nasu, T. Ogawa, Naoki Kobayashi, Toshiki Hisada, N. Ookuma, Noboru Shibata, G. Hemink, M. Sato, Toshifumi Hashimoto, S. Sakai, K. Kanazawa, Masahiro Yoshihara, Yosuke Kato, Yasuyuki Kajitani, Tomofumi Fujimura, Kazushige Kanda, Tomohiro Sugimoto, G. Liang, Y. Matsumoto, Katsuaki Isobe, K. Iwasa, T. Kobayashi, J. Nakai, M. Inagaki, S. Inoue, T. Ariki, Masaru Koyanagi, M. Watanabe, K. Inuzuka, Yoshinao Suzuki, Naofumi Abiko, M. Kojima, Naoaki Kanagawa, Y. Honda, Y. Utsunomiya, S. Zaitsu, Makoto Miakashi, Mitsuhiro Noguchi, M. Higashitani, D. He, F. Moogat, Hardwell Chibvongodze, Mitsuaki Honma, Teruhiko Kamei, Yuui Shimizu, Cuong Trinh, K. Ino, Michio Nakagawa, Toshihiro Suzuki, Ryuji Yamashita
Publikováno v:
ISSCC
NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Re
Autor:
Hao Nguyen, Tomofumi Fujimura, Yasuyuki Kajitani, Alex Mak, Seungpil Lee, T. Watanabe, Norihiro Fujita, Yuko Namiki, Hardwell Chibvongodze, H. Nasu, Toshihiko Himeno, Toshihiro Suzuki, Takuya Futatsuyama, Yoshiaki Takeuchi, Kosuke Yanagidaira, Naofumi Abiko, Yi-Ching Liu, Toshifumi Hashimoto, Makoto Iwai, Teruhiko Kamei, Yoshihiko Shindo, Koji Kato, T. Maruyama, Man Mui, Hitoshi Shiga, Naoya Tokiwa, Takamitsu Hori, Masahide Matsumoto, Yasuyuki Fukuda, Shigeo Ohshima, Naoaki Kanagawa, Toshiaki Edahiro, Kiyofumi Sakurai, Norifumi Kajimura, Hong Ding, Manabu Sakai, Takahiko Hara, Jeffery Lutze
Publikováno v:
ISSCC
NAND flash memories are used in digital still cameras, cellular phones, MP3 players and various memory cards. As seen in the growing needs for applications such as solid-state drives and video camcoders, the market demands for larger-capacity storage
Autor:
Toshiki Seshita, Toshifumi Hashimoto, Yoshiko Ikeda, T. Matsunaga, Toshihiro Suzuki, N. Uchitomi, T. Terada, Hirotsugu Wakimoto, Yoshiaki Kitaura, K. Ishida
Publikováno v:
Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.
High-speed multiplexers (MUXs) are key components in optical-fiber communication systems. MUXs with a higher operating frequency are desirable to realize increases in data transmission capacity. Furthermore, MUXs with a higher number of bits are also
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:2985
Reliability of Ti–Pt–Au and Ti–Mo–Au systems has been investigated for GaAs integrated circuit first‐level metallizations on semi‐insulating GaAs substrates and second‐level metallizations on interlayer SiO2 films using Auger depth prof