Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Toshiaki Tatsuta"'
Autor:
Ram S. Katiyar, James F. Scott, Ashok Kumar, Shin-ichi Motoyama, Toshiaki Tatsuta, Osamu Tsuji, M. Echizen
Publikováno v:
Integrated Ferroelectrics. 133:9-14
ZnO thin films were deposited on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition. High-quality ZnO thin films were fabricated on both substrates successfully. Interdigital transducer-shaped Al electrodes were used for meas
Autor:
Margarita Correa, Toshiaki Tatsuta, Finlay D. Morrison, M. M. Saad, Hong Jin Fan, S. Kawasaki, Osamu Tsuji, James F. Scott, Gustau Catalan, J. M. Gregg
Publikováno v:
Integrated Ferroelectrics. 95:180-186
A modification of liquid source misted chemical deposition process (LSMCD) with heating mist and substrate has developed, and this enabled to control mist penetrability and fluidity on sidewalls of three-dimensional structures and ensure step coverag
Autor:
Xiaojie Lou, Finlay D. Morrison, James F. Scott, Ming Zhang, M. Miyake, Osamu Tsuji, T. J. Leedham, Toshiaki Tatsuta
Publikováno v:
Integrated Ferroelectrics. 74:165-172
We have found that a hafnia precursor (hafnium bis-isopropoxy bis-thd) for chemical solution deposition (CSD) yields a crystallization temperature ca. 80°C above that usually found for CSD film deposition (e.g., 521°C for Hf-butoxide). These result
Publikováno v:
Integrated Ferroelectrics. 62:129-132
This paper presents the advanced Liquid Source Misted Chemical Deposition (LSM-CD) system equipped with a new atomizer and a refiner with ultrasonic vibration (USV). This system has been developed based on conventional LSM-CD system having 2–3 μm
Publikováno v:
Japanese Journal of Applied Physics. 42:7112-7115
Conventionally, argon plasma has been used as a method of improving wire bonding performance by removing contaminants (nickel, nickel oxides, and impurities concentrated on the gold surface) from the gold bond pads after the die-bond cure process. Th
Autor:
T. J. Leedham, Toshiaki Tatsuta, James F. Scott, Finlay D. Morrison, Marin Alexe, Osamu Tsuji
Publikováno v:
Microelectronic Engineering. 66:591-599
We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory appl
Publikováno v:
Integrated Ferroelectrics. 53:287-297
The liquid source misted chemical deposition (LSMCD) method has attracted much attention for fabricating integrated ferroelectric random access memories (FeRAMs). We have developed a new atomizer and an advanced refiner with ultrasonic vibration whic
Autor:
Shinji Nakagami, Hirohiko Nakano, Kikuko Yoshimura, Takeshi Minaguchi, Osamu Tsuji, Toshiaki Tatsuta
Publikováno v:
Journal of Photopolymer Science and Technology. 15:283-290
Changes of discharge state in inductively coupled plasma (ICP) were investigated by use of a radio frequency (RF) impedance analyzer. A voltage loaded on the ICP coil and a current flowing within the coil were plotted against the RF power, and the tw
Publikováno v:
Journal of Photopolymer Science and Technology. 14:73-80
Autor:
Keiko Toyozawa, Zempachi Ogumi, Hirohiko Nakano, Osamu Tsuji, Takeshi Abe, Toshiaki Tatsuta, Kikuko Yoshimura, Takeshi Minaguchi
Publikováno v:
Journal of Photopolymer Science and Technology. 13:13-20
In order to prepare a cation-exchange membrane, trifluoromethanesulfonic acid (TFMS) and octafluorocyclobutane (OFCB) were plasma-polymerized. Addition of water vapor to the plasma reactor was more effective in preserving the sulfonic acid group in t