Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Toshiaki Itabashi"'
Autor:
Toshiaki Shirasaka, Kenya Adachi, Mamoru Sasaki, Tomoaki Shibata, Toshiaki Itabashi, Kaori Kobayashi, Satoshi Yoneda, Daisaku Matsukawa
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
Cu/insulating material hybrid bonding technology was a promising process for high performance three-dimensional integrated package. A novel polyimide (PI) and thermal compression bonding (TCB) process were proposed for chip to wafer hybrid bonding. T
Autor:
Toshiaki Tanaka, Takeharu Motobe, Yuichi Kaneya, Toshiaki Itabashi, Kohji Katoh, Masayuki Ohe, Soejima Kazuya
Publikováno v:
Journal of Photopolymer Science and Technology. 22:393-396
Polyimide (PI) materials have been widely used as stress buffer and rewiring cover layers to improve semiconductor reliability. As these applications require compatibility with various organic and/or inorganic materials, the effect of plasma treatmen
Autor:
Toshiaki Ishimaru, Shiro Kobayashi, T. Mutho, Osamu Miura, Haruo Akahoshi, Miyazaki Masashi, Akio Takahashi, Mineo Kawamoto, Toshiaki Itabashi, Motoyo Wajima
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A. 18:127-135
Two types of additive processes for fine circuit pattern manufacturing technology using electroless copper plating have been developed. The processes offer high dimensional accuracy. Technical aspects of the additive processes, materials for the fabr
Autor:
Michael Topper, T. Fritzsch, Kai Zoschke, Matthew Souter, Oswin Ehrmann, Melvin P. Zussman, Hermann Oppermann, Thorsten Fischer, Toshiaki Itabashi, K-D. Lang
Publikováno v:
2012 IEEE 62nd Electronic Components and Technology Conference.
Temporary wafer bonding for thin wafer processing is one of the key technologies of 3D system integration. In this context we introduce the polyimide material HD3007 which is suitable for temporary bonding of silicon wafers to carrier wafers by using
Autor:
Hiroyuki Ishida, Toshiaki Itabashi, Melvin P. Zussman, Thorsten Fischer, Michael Topper, Masashi Kotani, Kai Zoschke
Publikováno v:
3DIC
Most advanced IC devices including packaging and substrates are requiring smart solution for wafer thinning/handling as well as stacking techniques to enhance performance and/or achieving ultimate assembling density. However existence thinning and ha
Dry film photo resists and polymers - the low cost option for standard and 3-D wafer level packaging
Autor:
Michael Topper, Toshiaki Itabashi, Werner Liebsch, Klaus-Dieter Lang, Oswin Ehrmann, Karin Hauck, Dion Manessis, Tobias Baumgartner, Mats Ehlin
Publikováno v:
2010 11th International Conference on Electronic Packaging Technology & High Density Packaging.
Driving packaging cost down is essential to make products cheaper. There are several options to reduce costs: One is to switch from one packaging technology to another (cheaper) one. The other is to cut costs for an existing process step by using che
Autor:
Melvin P. Zussman, Toshiaki Itabashi
Publikováno v:
2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).
Recent advanced devices including packaging and substrates required smart solution for wafer thinning and handling techniques. In addition to 3D-TSV packages, CIS, SiP, power devices, MEMS and SI interposer technologies require thinned substrates wit
Autor:
Toshiaki Itabashi
Publikováno v:
2009 59th Electronic Components and Technology Conference.
There is a consistence flux of miniaturization, value added functionality to IC packaging/modules driven by significant increase of mobile/networking products in the consumer market. The advanced packaging technologies, particularly TSV/3D-TSV approa
Autor:
Soichi Tanaka, Toshiaki Itabashi
SYNOPSIS A Neogene silty mudstone is classified in several types by heterogeneity and discontinuity; Intact(massive), Crushed, Sheared and Argillized, Which has peculiar features of physical, chemical and mechanical properties corresponding to the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c23b4a930b9d01ee4060610d3481931f
https://doi.org/10.1016/b978-0-08-035894-9.50026-3
https://doi.org/10.1016/b978-0-08-035894-9.50026-3