Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Toshiaki Fukunaga"'
Publikováno v:
Electrical Engineering in Japan. 158:53-59
We report high-power technologies in 0.8-µm Al-free InGaAsP/InGaP laser diodes. To realize the high-power operation, the improvement of catastrophic optical mirror damage (COMD) power density level is required. In addition to the use of low surface
Autor:
Yuji Hashimoto, Fujio Numano, Yukio Kishi, Akio Kawakami, Toshiaki Fukunaga, Takatoshi Nakajima, Makoto Noda, Akira Tanaka, Hiroshi Asaoka, Michio Usui
Publikováno v:
Internal Medicine. 35:502-506
Visceral leishmaniasis is a chronic infectious disease caused by a protozoan parasite of the genus Leishmania, characterized by intermittent fever, monocytosis, hepatosplenomegaly and hypergammaglobulinemia. This morbid condition is rather difficult
Automatic quasiphase matching for second‐harmonic generation in a periodically poled LiNbO3waveguide
Publikováno v:
Journal of Applied Physics. 71:22-27
A novel technique is proposed and experimentally demonstrated to achieve a quasiphase matching (QPM) condition for second‐harmonic generation (SHG) in a nonlinear optical waveguide with a periodically poled LiNbO3 waveguide. The fundamental wave sa
Autor:
Mitsugu Wada, T. Kuniyasu, Hideki Asano, F. Yamanaka, Toshiro Hayakawa, Toshiaki Fukunaga, Tsuyoshi Ohgoh
Publikováno v:
Applied Physics Letters. 75:1839-1841
Systematic study on the effects of the waveguide thickness Wg has been carried out for 200-μm-wide stripe separate-confinement-heterostructure lasers in the range of Wg=0.22–1.2 μm while the width of single quantum well is kept constant at 10 nm.
Publikováno v:
Applied Physics Letters. 74:3090-3092
Temperature-insensitive characteristics have been demonstrated in single mode 1.06 μm InGaAs single-quantum-well laser diodes grown by metalorganic vapor phase epitaxy. The large band-gap AlGaInP current blocking layer is employed in the buried-ridg
Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields
Autor:
Jacques Allègre, Toshiaki Fukunaga, Y. El Khalifi, Pierre Lefebvre, Bernard Gil, Henry Mathieu
Publikováno v:
Solid State Communications
Solid State Communications, Elsevier, 1990, 75 (8), pp.677. ⟨10.1016/0038-1098(90)90223-X⟩
Solid State Communications, Elsevier, 1990, 75 (8), pp.677. ⟨10.1016/0038-1098(90)90223-X⟩
International audience; Optical properties of (1 1 3)-grown GaAs-(GaAl)As single quantum wells (SQW's) have been studied by wavelength- and piezomodulated spectroscopy. A supermodulation of light hole states is observed in piezomodulation spectroscop
Autor:
Y. El Khalifi, Gérard Neu, Hisao Nakashima, Bernard Gil, Jean Massies, C. de Paris, Toshiaki Fukunaga, Henry Mathieu
Publikováno v:
Physical Review B. 41:2885-2889
Calcul de la forme des raies de reflectivite en fonction de l'epaisseur pres des resonances excitoniques. Par comparaison directe entre la reflectivite experimentale et celle calculee, on deduit la force de l'oscillateur des excitons 1s et 2s. L'exci
Publikováno v:
Journal of Crystal Growth. 99:352-355
Optical properties of maskless selectively grown GaAs and Al x Ga 1− x As ( x ≊0.28) layers on V-grooved Si substrates by low-pressure metalorganic vapor phase epitaxy are reported. No crystal growth occurred on the {111} Si sidewalls of the V-gr
Publikováno v:
Optical Fiber Communication Conference and Exhibit.
High reliability and high-power 1.05 /spl mu/m highly strained InGaAs laser diodes were realized with using strain compensation for pumping TDFA. We can expect high performances similar to those of conventional 0.98 /spl mu/m lasers being used for pu
Publikováno v:
In-Plane Semiconductor Lasers V.
Temperature insensitive threshold current in strain- compensated-(In x Ga 1-x As/GaAsP) SQW-lasers with x X 0.3 is investigated by changing x equals 0.2, 0.25 and 0.3 by the spectral measurement and the threshold carrier density determined by lasing