Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Torunn Ervik"'
Publikováno v:
Annals of Work Exposures and Health. 67:i34-i34
Asbestos containing materials (ACMs) are still found in many buildings even though the use of asbestos in building materials has been prohibited in Norway since 1985. Employees that may be at risk of exposure to airborne fibers are workers within the
Publikováno v:
Acta Materialia. 67:199-206
An investigation of two industrially cast quasi-monocrystalline silicon blocks revealed a high dislocation density originating at intersections between the seed crystals. This may be ascribed to three different generation mechanisms. Firstly, a dislo
Autor:
Jasmin Hofstetter, Torunn Ervik, Sergio Castellanos, Gaute Stokkan, Tonio Buonassisi, Maulid Kivambe
Publikováno v:
Solid State Phenomena. :71-76
Light microscopy, electron backscatter diffraction and transmission electron microscopy is employed to investigate dislocation structure and impurity precipitation in commonly occurring dislocation clusters as observed on defect-etched directionally
Publikováno v:
Acta Materialia. 60:6762-6769
Dislocation etch-pit structures on multicrystalline silicon rods deformed at 900 °C in four-point bending were studied prior to and after a high-temperature annealing. After deformation, the majority of the dislocation etch-pits were aligned along t
Publikováno v:
Acta Materialia. 59:7703-7710
Highly detrimental dislocation clusters are frequently observed in lab-scale as well as industrially produced multicrystalline silicon ingots for solar cell applications. This paper presents an investigation of dislocation clusters and how they devel
Publikováno v:
Solid State Phenomena. :307-312
A crystal is known to achieve lower energy if lattice dislocations are re-arranged in arrays forming a sub-grain boundary through a recovery process. Interaction of boundary dislocations with glide dislocations is also expected to bring about local e
Publikováno v:
Journal of Applied Physics. 112:103528
The microstructure of highly dislocated stacking fault regions (dislocation density >106 cm−2) in industrial cast multicrystalline silicon has been investigated by light microscopy, scanning electron microscopy, and transmission electron microscopy
Publikováno v:
Journal of Applied Physics. 110:063524
The microstructure of commonly occurring dislocation patterns in industrial directionally solidified multicrystalline silicon has been systematically studied by light microscopy, electron backscatter diffraction, and transmission electron microscopy.