Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Toru Yoshie"'
Autor:
Akinori Takeyama, Takahiro Makino, Shuichi Okubo, Yuki Tanaka, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
Publikováno v:
Materials, Vol 12, Iss 17, p 2741 (2019)
Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFET
Externí odkaz:
https://doaj.org/article/888b4f039ec949b39f62894770b38ae0
Autor:
Keisuke Kawamura, Shigeomi Hishiki, Hiroki Uratani, Sumito Ouchi, Hiroki Suzuki, Yoshiki Sakaida, Koichi Kitahara, Hirokazu Goto, Ichiro Hide, Shuichi Kaneko, Osamu Machida, Toru Yoshie
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e02bbaa7eab26b7421d1f059c2bf152
https://doi.org/10.7567/ssdm.2020.d-10-04
https://doi.org/10.7567/ssdm.2020.d-10-04
Autor:
Takeshi Ohshima, Takahiro Makino, Yuki Tanaka, Toru Yoshie, Yasuto Hijikata, Shuichi Okubo, Akinori Takeyama
Publikováno v:
Materials
Volume 12
Issue 17
Materials, Vol 12, Iss 17, p 2741 (2019)
Volume 12
Issue 17
Materials, Vol 12, Iss 17, p 2741 (2019)
Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4aac67d8ab5637b8ab9bbcff717b058
http://europepmc.org/articles/PMC6747762
http://europepmc.org/articles/PMC6747762
Autor:
Yasuto Hijikata, Y. Tanaka, Shinobu Onoda, Akinori Takeyama, T. Miyazaki, Takeshi Ohshima, Mikio Kandori, Toru Yoshie, Takahiro Makino
Publikováno v:
Superlattices and Microstructures. 99:197-201
We investigated the gamma-ray irradiation effect on 4H-SiC device process-induced defects by photoluminescence (PL) imaging and deep level transient spectroscopy (DLTS). We found that basal plane dislocations (BPDs) that were present before the irrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc70da5cb2b59fd230c9358475450bd6
https://doi.org/10.1016/j.spmi.2016.03.005
https://doi.org/10.1016/j.spmi.2016.03.005
Autor:
Takuma Matsuda, Satoshi Mitomo, Koichi Murata, Hiroshi Abe, Takeshi Ohshima, Mikio Kandori, Yasuto Hijikata, Shinobu Onoda, Akinori Takeyama, Yuki Tanaka, Takahiro Makino, Toru Yoshie, Takashi Yokoseki
Publikováno v:
Materials Science Forum. 858:860-863
Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf1e649cf8c32551f6e2633eb1bb724b
https://doi.org/10.4028/www.scientific.net/msf.858.860
https://doi.org/10.4028/www.scientific.net/msf.858.860
Autor:
Yasuyoshi Kaneko, Koichi Murata, Akinori Takeyama, Takashi Yokozeki, Yugo Kobayashi, Michihiro Hachisuka, Toru Yoshie, Mikio Kandori, Takuma Matsuda, Shinobu Onoda, Yasuto Hijikata, Satoshi Mitomo, Takahiro Makino, Takeshi Ohshima, Yuki Tanaka
Publikováno v:
Materials Science Forum. 858:868-871
Gamma-ray irradiation effects on motor-driver circuits composed of 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) under motor driving with different Pulse-Width-Modulation (PWM) frequencies were investigated. In the case of PWM f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e476444728caed57bd0ae93df2d4f993
https://repo.qst.go.jp/records/47724
https://repo.qst.go.jp/records/47724
Autor:
Shinobu Onoda, Toru Yoshie, Takahiro Makino, Yuki Tanaka, Takeshi Ohshima, Hiroshi Abe, Mikio Kandori, Takashi Yokoseki, Yasuto Hijikata
Publikováno v:
Materials Science Forum. :705-708
Effects of gamma-ray irradiation and subsequent thermal annealing on the characteristics of vertical structure power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) fabricated on 4H-SiC were studied. After irradiation at 1.2 MGy, the dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b8c83334bb32f490fa8f8df940f5f40
https://doi.org/10.4028/www.scientific.net/msf.821-823.705
https://doi.org/10.4028/www.scientific.net/msf.821-823.705
Autor:
Yasuto Hijikata, Takeshi Ohshima, Toru Yoshie, Shinobu Onoda, Mikio Kandori, Takahiro Makino, Satoshi Mitomo, Yuki Tanaka, Takashi Yokoseki, Akinori Takeyama, Takuma Matsuda, Shuichi Okubo, Koichi Murata
Publikováno v:
physica status solidi (a). 214:1600425
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21ce914c60aac51d6c842813b44ac89
https://doi.org/10.1002/pssa.201600425
https://doi.org/10.1002/pssa.201600425
Autor:
Mikio Kandori, Yuki Tanaka, Takeshi Ohshima, Shinobu Onoda, Takahiro Makino, Takuma Matsuda, Takashi Yokoseki, Koichi Murata, Akinori Takeyama, Toru Yoshie, Shuichi Okubo, Satoshi Mitomo, Yasuto Hijikata
Publikováno v:
physica status solidi (a). 214:1600446
Gamma-ray irradiation into vertical type n-channel hexagonal (4H)-silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) was performed under various gate biases. The threshold voltage for the MOSFETs irradiated with a cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57a973eebba6f1153c09dcf1f96ed1f5
https://doi.org/10.1002/pssa.201600446
https://doi.org/10.1002/pssa.201600446
Autor:
Akinori Takeyama, Takashi Yokoseki, Shuichi Okubo, Shinobu Onoda, Yasuto Hijikata, Koichi Murata, Takuma Matsuda, Takeshi Ohshima, Mikio Kandori, Satoshi Mitomo, Takahiro Makino, Toru Yoshie, Yuki Tanaka
Publikováno v:
Japanese Journal of Applied Physics. 55:104101
The response of hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) to gamma-ray irradiation was investigated under elevated temperature and humid conditions. The shift in drain current–gate v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3592320445e73b4c0ec54ecc1c73e4fe
https://doi.org/10.7567/jjap.55.104101
https://doi.org/10.7567/jjap.55.104101