Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Toru Fujimori"'
Publikováno v:
Journal of Advanced Mechanical Design, Systems, and Manufacturing, Vol 6, Iss 6, Pp 999-1014 (2012)
Numerical error compensation is a cost-effective way to further improve the accuracy of high precision CNC machine tools. This paper discusses the major techniques for numerical error compensation on high precision machine tools. First, the high accu
Externí odkaz:
https://doaj.org/article/f9c77f9d6e3b4b1dadcd9f5f8e4c59e2
Autor:
Keiyu Ou, Naohiro Tango, Nishiki Fujimaki, Kazuhiro Marumo, Nobuhiro Hiura, Satomi Takahashi, Toru Fujimori
Publikováno v:
Advances in Patterning Materials and Processes XL.
Autor:
Toru Fujimori
Publikováno v:
2022 International Symposium on Semiconductor Manufacturing (ISSM).
Autor:
Toru Fujimori
Publikováno v:
2022 International Workshop on Advanced Patterning Solutions (IWAPS).
Autor:
Toru Fujimori
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Autor:
Toru Fujimori, Kazuo Yamazaki, Kayoko Taniguchi, Shigeaki Maruyama, Shinya Kidani, Masakazu Soshi, Naruhiro Irino
Publikováno v:
Journal of Manufacturing Processes. 56:1286-1293
In order to achieve high accuracy of computer numerical controlled (CNC) machine tools, various error compensation functions are implemented in the CNC control system. However, these error compensations are not designed to track the dynamic change in
Autor:
Toru Fujimori
Publikováno v:
2021 International Workshop on Advanced Patterning Solutions (IWAPS).
Autor:
Naohiro Tango, Kei Yamamoto, Michihiro Shirakawa, Keiyu Ou, Akiyoshi Goto, Mitsuhiro Fujita, Yasuharu Shiraishi, Toru Fujimori
Publikováno v:
Journal of Photopolymer Science and Technology. 32:445-448
Autor:
Toru Fujimori
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
Extreme ultraviolet (EUV) lithography is almost ready for realize 7nm generation manufacturing and beyond. A key factor for the realization of EUV lithography is the choice of EUV resist materials that are capable of resolving below 15nm half pitch w
Autor:
Toru Fujimori
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
Extreme ultraviolet (EUV) lithography is almost ready for realize 7nm generation manufacturing and beyond. A key factor for the realization of EUV lithography is the choices of EUV resist materials that are capable of resolving below 15nm half pitch