Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Torsten Stiehm"'
Autor:
Anna Blob, Rudolf Bratschitsch, Iris Niehues, Torsten Stiehm, Steffen Michaelis de Vasconcellos
Publikováno v:
Nanoscale. 11:12788-12792
Atomically thin semiconducting transition metal dichalcogenides (TMDCs) have unique mechanical and optical properties. They are extremely flexible and exhibit a strong optical absorption at their excitonic resonances. Excitons in TMDC monolayers are
Autor:
Philipp Tonndorf, Rudolf Bratschitsch, Robert Schmidt, Nikos L. Doltsinis, Torsten Stiehm, Johannes Kern, Christian Schwermann, Robert Schneider, Steffen Michaelis de Vasconcellos
Publikováno v:
Physical Chemistry Chemical Physics. 20:16918-16923
Chemical treatments to enhance photoluminescence (PL) in MoS2 have been explored extensively by experimental means in recent years. However, satisfactory theoretical explanations of the underlying mechanisms remain elusive. In this work, the surface
Autor:
Arnab Bhattacharya, Jonathan Noky, Osvaldo Del Pozo-Zamudio, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch, Thorsten Deilmann, Matthias Drüppel, Robert Schneider, Bhakti Jariwala, Robert Schmidt, Michael Rohlfing, Peter Krüger, Torsten Stiehm, Ashish Arora
Publikováno v:
Nano Letters. 17:3202-3207
Atomically thin materials such as graphene or MoS2 are of high in-plane symmetry. Crystals with reduced symmetry hold the promise for novel optoelectronic devices based on their anisotropy in current flow or light polarization. Here, we present polar
Autor:
Rudolf Bratschitsch, Johannes Kern, Iris Niehues, Steffen Michaelis de Vasconcellos, Torsten Stiehm, Robert Schneider
Publikováno v:
The Review of scientific instruments. 90(8)
Two-dimensional semiconductors have recently emerged as promising materials for novel optoelectronic devices. In particular, they exhibit favorable nonlinear optical properties. Potential applications include broadband and ultrafast light sources, op
Autor:
Christian, Schwermann, Torsten, Stiehm, Philipp, Tonndorf, Robert, Schneider, Robert, Schmidt, Johannes, Kern, Steffen, Michaelis de Vasconcellos, Rudolf, Bratschitsch, Nikos L, Doltsinis
Publikováno v:
Physical chemistry chemical physics : PCCP. 20(25)
Chemical treatments to enhance photoluminescence (PL) in MoS2 have been explored extensively by experimental means in recent years. However, satisfactory theoretical explanations of the underlying mechanisms remain elusive. In this work, the surface
Autor:
Ashish, Arora, Jonathan, Noky, Matthias, Drüppel, Bhakti, Jariwala, Thorsten, Deilmann, Robert, Schneider, Robert, Schmidt, Osvaldo, Del Pozo-Zamudio, Torsten, Stiehm, Arnab, Bhattacharya, Peter, Krüger, Steffen, Michaelis de Vasconcellos, Michael, Rohlfing, Rudolf, Bratschitsch
Publikováno v:
Nano letters. 17(11)
Autor:
Philipp Tonndorf, Johannes Kern, Iris Niehues, Robert Schneider, Steffen Michaelis de Vasconcellos, Torsten Stiehm, Robert Schmidt, Daniel Wigger, Rudolf Bratschitsch, Doris E. Reiter, Tilmann Kuhn
Publikováno v:
2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Single-photon sources are important building blocks for quantum technology. Recently, bright and stable single-photon emitters have been reported in the atomically thin semiconductor WSe 2 . However, the localized light sources appear at random posit
Autor:
Torsten Stiehm, Rudolf Bratschitsch, Robert Schmidt, Steffen Michaelis de Vasconcellos, Johannes Kern
Publikováno v:
Applied Physics B. 123
Metal nanoantennas give rise to strongly localized and enhanced electric fields. The enhancement is largest at the plasmon resonance, which, therefore, needs to be characterized. Here, we use polarization contrast microscopy for imaging and spectrosc
Autor:
Ashish, Arora, Jonathan, Noky, Matthias, Drüppel, Bhakti, Jariwala, Thorsten, Deilmann, Robert, Schneider, Robert, Schmidt, Osvaldo, Del Pozo-Zamudio, Torsten, Stiehm, Arnab, Bhattacharya, Peter, Krüger, Steffen, Michaelis de Vasconcellos, Michael, Rohlfing, Rudolf, Bratschitsch
Publikováno v:
Nano letters. 17(5)
Atomically thin materials such as graphene or MoS
Autor:
Maxim Raskin, Martin S. Brandt, Rudolf Bratschitsch, Kelly Whitaker, Torsten Stiehm, Alicia W. Cohn, Daniel R. Gamelin, Stefan T. Ochsenbein, Steffen Michaelis de Vasconcellos
Publikováno v:
physica status solidi (b). 251:1685-1693
Magnetic wide-bandgap semiconductors based on ZnO and GaN are promising for spintronics applications and interesting for studying the interaction of charge carriers with magnetic ions. We use time-resolved Faraday rotation spectroscopy to investigate