Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Torsten M. Geppert"'
Autor:
Daniel Pergande, Benjamin Gesemann, Stefan L. Schweizer, Torsten M. Geppert, Ralf B. Wehrspohn, Susanne Moretton, Armin Lambrecht
Publikováno v:
Comptes Rendus Chimie. 16:51-58
Periodic silicon nanostructures can be used for different kinds of gas sensors depending on the analyte concentration. First, we present an optical gas sensor based on the classical non-dispersive infrared technique for ppm-concentration using ultra-
Publikováno v:
ECS Transactions. 16:61-67
We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. The limits of t
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 4:148-150
The precision of photo-electrochemical etching of perfectly-ordered macropores in single-crystalline silicon is limited by pore diameter fluctuations due to doping variations of the starting wafer (striations). The doping variation originates from th
Autor:
Ralf B. Wehrspohn, Torsten M. Geppert, Armin Lambrecht, Stefan L. Schweizer, Daniel Pergande, Susanne Moretton, Benjamin Gesemann
Publikováno v:
SPIE Proceedings.
Periodic silicon nanostructures can be used for different kinds of gas sensors depending on the analyte concentration. First we present an optical gas sensor based on the classical non-dispersive infrared technique for ppm-concentration using ultra-c