Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Torsten Klick"'
Publikováno v:
ISQED
With the continued scaling of MOSFET feature size, reducing the SoC power consumption has become one of the main challenges for the semiconductor industry. Lowering the data retention voltage $(\mathrm{V}_{\mathrm{ret}})$ can significantly improve th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e96a3945a7257cad68ef2ffcf1f6157b
https://doi.org/10.1109/isqed.2019.8697425
https://doi.org/10.1109/isqed.2019.8697425
Autor:
Tom Herrmann, Hongsik Yoon, Torsten Klick, Alban Zaka, Seunghwan Seo, Juergen Faul, Joerg Schmid, J. Kluth, Sandra Hecker, Zhen Xu, Udo Ziller, Chang Ming-Cheng, Ralf vanBentum, Gabriele Congedo, Vivek Joshi, Xin Zou, Hema Ramamurthy, Nigel Chan, Elke Erben, Youmean Lee, Petra Poth, C. Weintraub, Gerd Zschaetzsch
Publikováno v:
ESSDERC
This paper presents a 0.110um2Ultra Low Leakage (ULL) 6T-SRAM for Internet Of Things (lOT) application with competitive 0.7pA/cell retention leakage and $\pmb{1.45}\mathbf{mV}^{\ast}\mathbf{um}$ transistor mismatch coefficient (AVT). A back gate dopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e38aac1663ffb60b67b2bc0350072117
https://doi.org/10.1109/essderc.2018.8486897
https://doi.org/10.1109/essderc.2018.8486897
Autor:
Torsten Klick, Vivek Joshi, Fan Chen, Akash Kumar, Rakesh Ranjan, Yuncheng Song, T. Schaefer, Randy W. Mann, William McMahon, Sriram Balasubramanian, T. Nigam, Y. Mamy Randriamihaja, B. Parameshwaran
Publikováno v:
IRPS
Extended 6 Transistors (6T) SRAM (Static Random-Access Memory) characterization is used to measure degradation while separating intrinsic from extrinsic yield and accounting for yield assessment challenges such as voltage drop and measurement variabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::607166eea23089f10338cdd99e41ed29
https://doi.org/10.1109/irps.2015.7112759
https://doi.org/10.1109/irps.2015.7112759
Autor:
B. Parameshwaran, Andreas Kerber, Torsten Klick, G. Kurz, Randy W. Mann, Akhilesh Gautam, C. Weintraub, Vivek Joshi, T. Nigam, Joseph Versaggi, Sriram Balasubramanian, G. Krause
Publikováno v:
CICC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88f62e28d23f673a888bbe2d37678099
https://doi.org/10.1109/cicc.2014.6946031
https://doi.org/10.1109/cicc.2014.6946031
Autor:
Vivek Joshi, Elliot John Smith, Jürgen Faul, Torsten Klick, C. Weintraub, Joerg Schmid, X. Zou, Seunghwan Seo, R. vanBentum, Sriram Balasubramanian, Hema Ramamurthy, J. Yun, Nigel Chan, Hongsik Yoon
Publikováno v:
2017 Symposium on VLSI Technology
We present the SRAM bitcell offering from 22FDXTM (a 22nm FDSOI technology) with competitive 1.46mV-µm FinFET-like transistor mismatch coefficient (AVt) built with low cost planar architecture. Extremely low minimum operating voltages (V min ) are r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3209e125d6c7ee5d26075a7d75e3da76
