Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Torsten Hölscher"'
Autor:
Torsten Hölscher, Marcel Placidi, Ignacio Becerril-Romero, Robert Fonoll-Rubio, Victor Izquierdo-Roca, Angélica Thomere, Eduard Bailo, Thomas Schneider, Heiko Kempa, Roland Scheer, Alejandro Pérez-Rodríguez
This study presents the results of the development of semi-transparent Cu(In,Ga)Se2 (CIGSe) mini-modules for the application in building integrated photovoltaics (BIPV). Applying in-situ X-ray diffraction in real-time during CIGSe growth we find that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a89ec933e2ce20e05f9d3d55e0203b70
https://hdl.handle.net/2117/388401
https://hdl.handle.net/2117/388401
Publikováno v:
Proceedings of the MATSUS23 & Sustainable Technology Forum València (STECH23).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4edca15aec9b6bdd8b2122cd44760817
https://doi.org/10.29363/nanoge.matsus.2023.278
https://doi.org/10.29363/nanoge.matsus.2023.278
Publikováno v:
Progress in Photovoltaics: Research and Applications. 30:191-202
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de8d53da2c287ee329a4d945699e4c30
https://doi.org/10.1002/pip.3476
https://doi.org/10.1002/pip.3476
Publikováno v:
Thin Solid Films. 669:345-350
The simulation of solar cell devices is important for the understanding of defect physics and loss mechanisms in real solar cells. On the other hand, voltage dependent admittance spectroscopy delivers essential information for establishing a baseline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f45f7ecc1b332805fe323421f7fd3c3
https://doi.org/10.1016/j.tsf.2018.11.022
https://doi.org/10.1016/j.tsf.2018.11.022
Publikováno v:
Progress in Photovoltaics: Research and Applications. 26:934-941
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3d34e288701ed03dc073d83a3f6df66
https://doi.org/10.1002/pip.3041
https://doi.org/10.1002/pip.3041
Autor:
Stefan Hartnauer, Torsten Hölscher, Setareh Zahedi-Azad, Matthias Maiberg, Wolfgang Fränzel, Enrico Jarzembowski, Roland Scheer
Publikováno v:
Thin Solid Films. 633:208-212
The decay of the room-temperature time-resolved photoluminescence (TRPL) on thin-film semiconductors such as Cu(In,Ga)Se2 and Cu2ZnSnSe4 often is bi-exponential. This can be traced back either to fluctuations of the electrostatic potential or to mino
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acd84bde8a67c0c92ff7dc05c6208e70
https://doi.org/10.1016/j.tsf.2017.02.002
https://doi.org/10.1016/j.tsf.2017.02.002
Autor:
Titus Lindenberg, Behzad Mahmoudi, Roland Scheer, Thomas Schneider, Torsten Hölscher, Francesco Caddeo, A. Wouter Maijenburg
Publikováno v:
Electrochimica Acta. 367:137183
Cu-Ga-Se chalcopyrite structures with a band gap of 1.68 eV (CuGaSe2) to 1.85 eV (CuGa3Se5) are considered to be promising materials to be used as the photocathode in a tandem photoelectrochemical (PEC) water splitting configuration. Therefore, we pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b7b2554e657281171f17e2dcb6db610
https://doi.org/10.1016/j.electacta.2020.137183
https://doi.org/10.1016/j.electacta.2020.137183
Publikováno v:
Japanese Journal of Applied Physics. 57:08RC07
We present a comprehensive study concerning the light exposure of bare Cu(In,Ga)Se2 (CIGSe) layers in ambient air and its impact on the electrical properties of the solar cells. With time-resolved photoluminescence (TRPL) a degradation of the minorit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e68d5ac386fe4f79dbfd8cffb59bea
https://doi.org/10.7567/jjap.57.08rc07
https://doi.org/10.7567/jjap.57.08rc07
Publikováno v:
Applied Physics Letters. 111:011604
We investigate light-induced degradation of Cu(In,Ga)Se2 (CIGSe) layers by means of time-resolved photoluminescence (TRPL) measurements. Illumination in the range of minutes with 1 sun white light equivalent leads to a strong reduction of the carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c76eb5d497493957ccf5a390f271345
https://doi.org/10.1063/1.4992116
https://doi.org/10.1063/1.4992116
Publikováno v:
Applied Physics Letters. 107:122104
The main objective of time-resolved photoluminescence (TRPL) is to characterize minority carrier recombination in semiconductors. However, trap states in the band gap can lead to artificially long decay times thus distorting the measured minority car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22bb38abdd75daf3982beb0c2af09687
https://doi.org/10.1063/1.4931632
https://doi.org/10.1063/1.4931632