Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Torben Kelwing"'
Autor:
Rolf Stephan, Lutz Wilde, M. Weisheit, Lutz Herrmann, Alexander Wuerfel, Walter Hansch, Torben Kelwing, Hartmut Prinz, Bernhard Trui, Christoph Klein, Inka Richter, Rick Carter, Peter Kücher, S. Mutas, Falk Graetsch, Martin Trentzsch, Susanne Ohsiek, Anita Peeva, Andreas Naumann
Publikováno v:
ECS Transactions. 33:3-14
Future scaling of complementary metal oxide semiconductor (CMOS) technology requires high-k (HK) dielectrics with metal gate (MG) electrodes to realize higher gate capacitances and low gate leakage currents [1]. During the last decade the semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f183ab8e314b3efbdf19c02cd2021381
https://doi.org/10.1149/1.3481586
https://doi.org/10.1149/1.3481586
Autor:
Martin Trentzsch, Bernhard Trui, Rolf Stephan, Walter Hansch, Lutz Herrmann, Torben Kelwing, Andreas Naumann, Falk Graetsch, S. Mutas, Rick Carter, Peter Kücher
Publikováno v:
IEEE Electron Device Letters. 31:1149-1151
For the first time, HfZrO4 dielectrics deposited with metal-organic chemical vapor deposition (MOCVD) as well as atomic layer deposition (ALD) have been investigated as high-k gate dielectric for 32-nm high-performance logic SOI complementary metal-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73c985450aaae8f418252fd76e5ba623
https://doi.org/10.1109/led.2010.2059693
https://doi.org/10.1109/led.2010.2059693
Autor:
Martin Trentzsch, C. Radehaus, Michael Schreiber, Rolf Öttking, Torben Kelwing, Philipp Plänitz, Ebrahim Nadimi, Rick Carter
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 23(36)
The interaction between oxygen vacancies and La atoms in the La doped HfO(2) dielectric were studied using first principles total energy calculations. La dopants in the vicinity of a neutral oxygen vacancy (V(O)) show lower formation energy compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1b96346eaaa62ee6f21923421c35c41
https://pubmed.ncbi.nlm.nih.gov/21865638
https://pubmed.ncbi.nlm.nih.gov/21865638
Autor:
Stefan Flachowsky, Tom Herrmann, Andreas Naumann, Johann W. Bartha, Torben Kelwing, Stephan Kronholz, Peter Kücher, Martin Trentzsch, Thorsten Kammler
Publikováno v:
MRS Proceedings. 1194
Silicon germanium (SiGe) is considered to substitute silicon (Si) as channel material of p-type MOSFET in future CMOS generations due to its higher hole mobility. In this work we investigate SiGe channels with a germanium concentration of 23 at% and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7efd826a946a0e6fd0c478cb8e7dcda7
https://doi.org/10.1557/proc-1194-a04-04
https://doi.org/10.1557/proc-1194-a04-04
Autor:
Torben Kelwing, Andreas Naumann, Martin Trentzsch, Sergej Mutas, Bernhard Trui, Lutz Herrmann, Falk Graetsch, Christoph Klein, Lutz Wilde, Susanne Ohsiek, Martin Weisheit, Anita Peeva, Inka Richter, Hartmut Prinz, Alexander Wuerfel, Rick Carter, Rolf Stephan, Peter Kücher, Walter Hansch
Publikováno v:
ECS Meeting Abstracts. :1484-1484
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35f8de1f6cf690b1dbdaa59ca2037d3
https://doi.org/10.1149/ma2010-02/22/1484
https://doi.org/10.1149/ma2010-02/22/1484