Zobrazeno 1 - 10
of 250
pro vyhledávání: '"Tooru Tanaka"'
Autor:
Zhan Hua Li, Jia Xing He, Xiao Hu Lv, Ling Fei Chi, Kingsley O. Egbo, Ming-De Li, Tooru Tanaka, Qi Xin Guo, Kin Man Yu, Chao Ping Liu
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-16 (2022)
Deep understanding of defect physics, excitonic properties and the ultrafast carrier dynamics in the high mobility p-type transparent CuI is vital for its optoelectronic applications. Here, Liu et al. employ a synergistic approach to unveil these fun
Externí odkaz:
https://doaj.org/article/216fbd34527945a78a0977fdd3e40f83
Autor:
Bijoy Chandra Ghos, Syed Farid Uddin Farhad, Md Abdul Majed Patwary, Shanta Majumder, Md. Alauddin Hossain, Nazmul Islam Tanvir, Mohammad Atiqur Rahman, Tooru Tanaka, Qixin Guo
Publikováno v:
ACS Omega, Vol 6, Iss 4, Pp 2665-2674 (2021)
Externí odkaz:
https://doaj.org/article/8736036f8b7543719c6a3e6caf9da6a0
Autor:
Md Alauddin Hossain, Syed Farid Uddin Farhad, Nazmul Islam Tanvir, Jang Hyo Chang, Mohammad Atiqur Rahman, Tooru Tanaka, Qixin Guo, Jamal Uddin, Md Abdul Majed Patwary
Publikováno v:
Royal Society Open Science, Vol 9, Iss 3 (2022)
Cuprous oxide (Cu2O) nanorods have been deposited on soda-lime glass substrates by the modified successive ionic layer adsorption and reaction technique by varying the concentration of NaCl electrolyte into the precursor complex solution. The structu
Externí odkaz:
https://doaj.org/article/e086426095044ff5936145b036ca5e39
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035319-035319-7 (2021)
(AlxGa1−x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, at
Externí odkaz:
https://doaj.org/article/765a8f01fbe84b7c95b2590509270fc8
Publikováno v:
AIP Advances, Vol 10, Iss 10, Pp 105227-105227-5 (2020)
The optical temperature sensing properties based on the β-Ga2O3:Er film were reported. Using a laser with 488 nm as an excitation source, the temperature-dependent behavior of the fluorescence intensity ratio of two green emissions at 524 nm and 550
Externí odkaz:
https://doaj.org/article/5015238e1cb24d7db7b6104510250acf
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065125-065125-6 (2020)
We report on the impacts of oxygen radical ambient for (AlGa)2O3 films grown on sapphire substrates by pulsed laser deposition (PLD). All the films showed a monoclinic crystal structure and high transmittance in the ultraviolet and visible wavelength
Externí odkaz:
https://doaj.org/article/ec3509060bb8479b98fff7c006599d66
Publikováno v:
AIP Advances, Vol 10, Iss 2, Pp 025024-025024-6 (2020)
We have investigated the optical and electrical properties of (InGa)2O3:Eu films. We have demonstrated the obtained (InGa)2O3:Eu films have conductive transparent properties, and they can be used as a host for rare earth Eu. The (InGa)2O3:Eu films ar
Externí odkaz:
https://doaj.org/article/86727760bf634eda97af0517791a9de1
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085022-085022-4 (2019)
Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the waveleng
Externí odkaz:
https://doaj.org/article/487e166cc7444101a00e9e2639fca817
Autor:
Xu Wang, Zhengwei Chen, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015111-015111-10 (2016)
We report a detailed investigation on temperature-dependent Raman scattering of β-(AlGa)2O3 thin films with different Al content (0-0.72) under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon mo
Externí odkaz:
https://doaj.org/article/f6c07ff957fa4291b599e6bab3504669
Publikováno v:
Japanese Journal of Applied Physics.
Ga2O3 thin film with Eu doping was prepared on p-Si substrate by pulsed laser deposition to investigate the temperature dependence of photoluminescence from Eu3+ and host. The obtained Ga2O3:Eu thin film has a polycrystalline monoclinic structure and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c41e4954525050c0e042e8eeb13754b9
https://doi.org/10.35848/1347-4065/acd59b
https://doi.org/10.35848/1347-4065/acd59b