Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Tony DiBiase"'
Autor:
Tony DiBiase, Kuang-Jung Chen, Steven J. Holmes, Mark Slezak, Shannon Dunn, Kenichi Ueda, Emil Schmitt-Weaver, Judy Galloway, Andrew Metz, Jason Cantone, Karen Petrillo, Michael Crouse, Cherry Tang, Robert Routh, Aiquin Jiang, Chiew-seng Koay, Sumanth Kini, Youri van Dommelen, Matthew E. Colburn
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
As our ability to scale lithographic dimensions via reduction of actinic wavelength and increase of numerical aperture (NA) comes to an end, we need to find alternative methods of increasing pattern density. Double-Patterning techniques have attracte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fff83e0e58642ccb08017923aef736b
https://doi.org/10.1117/12.828483
https://doi.org/10.1117/12.828483
Autor:
Tony DiBiase, Thomas Wallow, Uzodinma Okoroanyanwu, Obert R. Wood, Bruno La Fontaine, Hiroyuki Mizuno, Youri van Dommelen, Thomas Laursen, Robert Douglas Watso, Brian Lee, Karen Petrillo, Jan Hendrick Peters, Sang-In Han, Bill Pierson, Yunfei Deng, Anna Tchikoulaeva, Sumanth Kini, Chiew-seng Koay, Christian Holfeld, Kevin Cummings
Publikováno v:
Photomask Technology 2008.
We have used ASML’s full field step-and-scan exposure tool for extreme ultraviolet lithography (EUVL), known as an Alpha Demo Tool, to investigate one of the critical issues identified for EUVL, defectivity associated with EUV masks. The main objec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6798a3be8270472eb233ec2e8a08bc76
https://doi.org/10.1117/12.801528
https://doi.org/10.1117/12.801528
Publikováno v:
SPIE Proceedings.
Recent interest and inclusion to the ITRS roadmap for the investigation of NIL (Nano Imprint Lithography) has brought back to life 1X mask making. Not only does NIL require 1X pattering, it also requires physical contact with the patterning media, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bebc8d0fd455df553ac1052ff8ae8db
https://doi.org/10.1117/12.655887
https://doi.org/10.1117/12.655887
Autor:
Jackie Cheng, Den Wang, Ben Eynon, Chih-Wei Chu, Lan-Hsin Peng, Ellison Chen, Jerry Huang, Kaustuve Bhattacharyya, Tony DiBiase, Kong Son, Farzin Mirzaagha
Publikováno v:
SPIE Proceedings.
Progressive mask defect problem is an industry wide mask reliability issue. During the start of this problem when the defects on masks are just forming and are still non-critical, it is possible to continue to run such a problem mask in production wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c6459c101518bca886167693eccbd0
https://doi.org/10.1117/12.632039
https://doi.org/10.1117/12.632039
Autor:
Amir Azordegan, J. A. Croon, L. H. A. Leunissen, M. Ercken, Tony DiBiase, Hedong Yang, G. F. Lorusso
Publikováno v:
SPIE Proceedings.
Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is the standard deviation. However, this approach is incomplete and ignores a substantial amount of information. We propose here a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f36ea6fc7410ee45366766e848165910
https://doi.org/10.1117/12.600185
https://doi.org/10.1117/12.600185
Publikováno v:
SPIE Proceedings.
An attempt is made to characterize the submicron litho process under confocal laser scanning microscope metrology, using `linearity' and `discrimination' as process control parameters. This was found to allow for a more detailed process characterizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aafdcc7e6a3bd95b69979b2f45fe7f8c
https://doi.org/10.1117/12.59781
https://doi.org/10.1117/12.59781
Autor:
Nadia Vandenbroeck, Amir Azordegan, Peter Leunissen, Tony DiBiase, C. Delvaux, Hedong Yang, Gian Francesco Lorusso, Frieda Van Roey, M. Ercken
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 5:033003
Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is standard deviation . However, a substantial amount of information is ignored if only is measured. We use an automated approach t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f546cab3816b8951210a375dec84258a
https://doi.org/10.1117/1.2242982
https://doi.org/10.1117/1.2242982
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