Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Tony Acosta"'
Autor:
Albert Chen, Ilya V. Karpov, Yifu Huang, Oleg Golonzka, Chris Connor, Nathan L. Strutt, Jiahan Zhang, Benjamin Sherrill, Tanmoy Pramanik, Jacob Medeiros, David Janosky, Jack C. Lee, Tony Acosta, Reed Hopkins, Abdullah Guler, Pedro A. Quintero, J. Hicks, Yao-Feng Chang, J. O'Donnell
Publikováno v:
IRPS
For the first time, the impact of temperature instability of resistive memory switching on potential neuromorphic computing applications has been extensively studied using eNVM-R and eNVM-M technologies developed on Intel 22FFL process. The reliabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7562524ea28260c4090ed2f0d3d555c
https://doi.org/10.1109/irps46558.2021.9405120
https://doi.org/10.1109/irps46558.2021.9405120
Autor:
Benjamin J. Orr, Nathan Jack, C. Auth, A. Schmitz, Tony Acosta, Steven S. Poon, Che-Yun Lin, Abdur Rahman, C. AnDyke, Rahim Kasim, K. Downes, G. McPherson, Sunny Chugh, Madhavan Atul, D. Nminibapiel, Adam Neale, K. Sethi, Seung Hwan Lee, S. Ramey, Tanmoy Pramanik, Michael L. Hattendorf, Emre Armagan, J. Palmer, Subhash M. Joshi, Ian R. Post, C. M. Pelto, P. Nayak, Yeoh Andrew W, G. Martin, Gerald S. Leatherman, H. Wu, N. Seifert, A. Lowrie, R. Grover, H. Mao
Publikováno v:
IRPS
We provide a comprehensive overview of the reliability characteristics of Intel’s 10+ logic technology. This is a 10 nm technology featuring the third generation of Intel’s FinFETs, seventh generation of strained silicon, fifth generation of high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e7a8286d09b3f3bfcb1c27f6a51e61
https://doi.org/10.1109/irps45951.2020.9128345
https://doi.org/10.1109/irps45951.2020.9128345
Autor:
Yao-Feng Chang, Oleg Golonzka, Roza Kotlyar, Nathan L. Strutt, Chris Connor, Albert Chen, J. Hicks, Tony Acosta, J. O'Donnell, Pedro A. Quintero
Publikováno v:
IRPS
For the first time, a comprehensive study of embedded nonvolatile memory (eNVM) resistive random access memory (RRAM) reliability performance and modeling in 22FFL FinFET technology is presented. RRAM retention relaxation is characterized and modeled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b2efb9433e85c2f39818a4c43279e68
https://doi.org/10.1109/irps45951.2020.9128359
https://doi.org/10.1109/irps45951.2020.9128359
Autor:
Rodriguez, J. A., Zhou, C., Graf, T., Bailey, R., Wiegand, M., Wang, T., Ball, M., Wen, H. C., Udayakumar, K. R., Summerfelt, S., San, T., Moise, T.
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW); 2016, p1-4, 4p
Autor:
Herrera, Brian Eugenio
Publikováno v:
TDR: The Drama Review (MIT Press); Winter2014, Vol. 58 Issue 4, p32-45, 14p, 6 Color Photographs, 1 Black and White Photograph
Publikováno v:
American City & County. Jun2003 Special Issue, Vol. 118 Issue 7, p1-227. 221p. 2 Charts.