Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Tongyao Luan"'
Publikováno v:
Applied Sciences, Vol 12, Iss 21, p 11077 (2022)
In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the fou
Externí odkaz:
https://doaj.org/article/7a4482c74da24d559d4d7879e126f3cd
Publikováno v:
Applied Sciences, Vol 12, Iss 21, p 10872 (2022)
With the increase in applications of the millimeter wave spectrum for phased array radar systems, mobile 7–13 communication systems, and satellite systems, the demand for a wideband, high-efficiency, high-power monolithic microwave integrated circu
Externí odkaz:
https://doaj.org/article/3a338450b6c94f0a919039fe07f4f237