Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tongxu Yu"'
Publikováno v:
Advanced Science, Vol 9, Iss 30, Pp n/a-n/a (2022)
Abstract By breaking the restrictions on traditional alloying strategy, the high entropy concept has promoted the exploration of the central area of phase space, thus broadening the horizon of alloy exploitation. This review highlights the marriage o
Externí odkaz:
https://doaj.org/article/6cd816cbafd84167b47707bcbba8f23f
Autor:
Tianping Ying, Yoshinori Muraba, Soshi Iimura, Tongxu Yu, Peihong Cheng, Toshio Kamiya, Yangfan Lu, Jiang Li, Yanpeng Qi, Hideo Hosono
Publikováno v:
iScience, Vol 23, Iss 6, Pp 101196- (2020)
Summary: The charge states of elements dictate the behavior of electrons and phonons in a lattice, either directly or indirectly. Here, we report the discovery of an anomalous charge state evolution in the superconducting M3Al2C (M = Mo, W) system, w
Externí odkaz:
https://doaj.org/article/3f57f024c157475db358e70cbd1ffb60
Publikováno v:
AIP Advances, Vol 3, Iss 10, Pp 102109-102109-9 (2013)
Ring formation from drying sessile colloidal droplets (∼1.0 mm in size) containing microparticles of silicon or polystyrene was investigated with video microscopy. Results show that ring formation begins at the pinned contact line with the growth o
Externí odkaz:
https://doaj.org/article/48e3320cf72d4b43a22088d753b105b4
Publikováno v:
Journal of the American Chemical Society. 143:7042-7049
The charge, spin, and composition degrees of freedom in high-entropy alloy endow it with tunable valence and spin states, infinite combinations and excellent mechanical performance. Meanwhile, the stacking, interlayer, and angle degrees of freedom in
Autor:
Cuiying, Pei, Tianping, Ying, Qinghua, Zhang, Xianxin, Wu, Tongxu, Yu, Yi, Zhao, Lingling, Gao, Changhua, Li, Weizheng, Cao, Qing, Zhang, Andreas P, Schnyder, Lin, Gu, Xiaolong, Chen, Hideo, Hosono, Yanpeng, Qi
Publikováno v:
Journal of the American Chemical Society. 144(14)
Here, we report on a new kind of compound, X
Autor:
Cuiying Pei, Tianping Ying, Qinghua Zhang, Xianxin Wu, Tongxu Yu, Yi Zhao, Lingling Gao, Changhua Li, Weizheng Cao, Qing Zhang, Andreas P. Schnyder, Lin Gu, Xiaolong Chen, Hideo Hosono, Yanpeng Qi
Here we report on a new kind of compound, X{\delta}Ir4X12-{\delta} (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c8a018f4b4a468bfd3758d9679fbcff
Autor:
Cuiying Pei, Tianping Ying, Qinghua Zhang, Xianxin Wu, Tongxu Yu, Yi Zhao, Lingling Gao, Changhua Li, Weizheng Cao, Qing Zhang, Schnyder, Andreas P., Lin Gu, Xiaolong Chen, Hideo Hosono, Yanpeng Qi
Publikováno v:
Journal of the American Chemical Society; 4/13/2022, Vol. 144 Issue 14, p6208-6214, 7p
Publikováno v:
Chemical Physics Letters. 677:172-177
Glass transition behavior of ternary disaccharide-ethylene glycol-water solutions, in reference to that of the binary combinations, has been investigated towards a better understanding of their cryoprotective ability. In water-deficient solutions, th
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 11, p1-8, 8p, 3 Black and White Photographs, 3 Graphs
Publikováno v:
Journal of Crystal Growth. 375:67-72
A1. Silicon thin film A3. Pulsed electron deposition A3. Crystallinity B2. Low temperature abstract Nanocrystalline silicon thin films were grown by using pulsed electron deposition onto substrates held at room temperature, and a substrate temperatur