Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Tongde Li"'
Autor:
Xinyu Li, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Liang Wang, Tongde Li, Xingyu Fang, Guo Jia, Zhonghan Deng
Publikováno v:
IEEE Transactions on Electron Devices. 70:2947-2955
Autor:
Shiwei Liang, Yu Yang, Lei Shu, Ziyuan Wu, Bingru Chen, Hengyu Yu, Hangzhi Liu, Liang Wang, Tongde Li, Gaoqiang Deng, Jun Wang
Publikováno v:
IEEE Transactions on Electron Devices. 70:1176-1180
Autor:
Tongde Li, Yuanfu Zhao, Liang Wang, Lei Shu, Hongchao Zheng, Weiyi Cao, Jingshuang Yuan, Junlin Li, Chenhui Wang
Publikováno v:
IEEE Transactions on Nuclear Science. 69:340-348
Autor:
Shuang Liu, Jincheng Zhang, Shenglei Zhao, Lei Shu, Xiufeng Song, Xuexue Qin, Yinhe Wu, Weihang Zhang, Tongde Li, Liang Wang, Zhihong Liu, Yuanfu Zhao, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:973-980
Autor:
Mehdi B. Tahoori, Chiyu Tan, Yuanfu Zhao, Tongde Li, Jun Han, Yan Li, Xiaoyang Zeng, Liang Wang, Xu Cheng
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 67:1619-1623
Soft errors induced by high energy particles have been a severe concern in integrated circuits. Especially in advanced nanoscale technology nodes, the phenomenon of multi-node-upset caused by charge sharing is becoming a crucial issue. However, this
Autor:
Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Liang Wang, Tongde Li, Dongqing Hu, Yu Wu, Zhonghan Deng
Publikováno v:
Microelectronics Reliability. 137:114770
Publikováno v:
IEEE Transactions on Nuclear Science. 66:875-879
The single-event transients (SETs) have become a main contributor to soft errors in deep sub-micrometer integrated circuits applied in space. The sensitivity of 65-nm very large scale integrated circuits (VLSI) to SET, especially to clock SET, is stu
Autor:
Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Dongqing Hu, Yu Wu, Liang Wang, Tongde Li, Zhonghan Deng
Publikováno v:
Microelectronics Reliability. 133:114545
Autor:
Shuang Liu, Jincheng Zhang, Shenglei Zhao, Lei Shu, Xiufeng Song, Chengjie Wang, Tongde Li, Zhihong Liu, Yue Hao
Publikováno v:
Applied Physics Letters. 120:202102
In this Letter, the effects of trap states in AlN/GaN superlattice channel HEMTs (high electron mobility transistors) under total ionizing dose with γ-irradiation have been systematically investigated. After 1 Mrad γ-irradiation with a dose rate of
Publikováno v:
Electronics; Volume 11; Issue 9; Pages: 1302
A cell-level radiation hardening by design (RHBD) method based on commercial processes of single event transient (SET) and single event upset (SEU) is proposed in this paper, in which new radiation-hardened D-type flip-flops (DFFs) are designed. An a