Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Tongchern Ong"'
Autor:
Carlos H. Diaz, Howard Wang, Min-Hwa Chi, Chien-Tai Chan, A.S. Oates, Huan-Just Lin, Shih-Chang Chen, Ching-Wei Tsai, Ying Jin, Hun-Jan Tao, Mong-Song Liang, Shang-Jr Chen, Tongchern Ong
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
Optimizing nitrogen incorporation in HfSiON gate dielectric can improve overall reliability, e.g. nMOS PBTI lifetime, hot carrier (HC) lifetime, time-to-breakdown (tBD), without adverse effects on pMOS NBT1 lifetime and electron/hole mobility. The im
Autor:
Wang, H.C.-H., Ching-Wei Tsai, Shang-Jr Chen, Chien-Tai Chan, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Diaz, C.H., Tongchern Ong, Oates, A.S., Mong-Song Liang, Min-Hwa Chi
Publikováno v:
2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p170-171, 2p