Výsledky vyhledávání - "Tong, Fei Ming"

Contribution of field-enhanced generation-recombination to Hg1−xCdxTe photodiode characteristics

Autor: Tong Fei-Ming, Yuan Hao-Xin, Tang Ding-Yuan

Publikováno v: Infrared Physics. 31:451-458

Field-enhanced generation-recombination, due to thermally assisted deep level-to-band tunneling, has been investigated for Hg1−xCdxTe photodiodes. A theoretical model is used for calculating the field-enhanced capture constants of carriers and the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e0cc0d732601cd2d40a489325214a933
https://doi.org/10.1016/0020-0891(91)90023-9

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Conference

Silicon microlenses for IR image sensors.

Autor: Ravindra, Nuggehalli M., Tong, Fei Ming, Pattnaik, Dhiren K., Ivanov, Dentcho I., Levy, Roland A., Aryusook, K., Patel, Vipulkumar

Publikováno v: Proceedings of SPIE; Nov1998, Issue 1, p152-161, 10p

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Conference

Development of emissivity models and induced transmission filters for multiwavelength imaging pyrometry.

Autor: Ravindra, Nuggehalli M., Tong, Fei Ming, Amin, Samiul, Shah, J., Kosonocky, Walter F., McCaffrey, Nathaniel J., Manikopoulos, Constantine N., Singh, Bawa, Soydan, Ramazan, White, Lawrence K., Zanzucchi, Pete, Hoffman, Dorothy, Markham, James R., Liu, Shaohua, Kinsella, Karen, Lareau, Richard T., Casas, L. M., Monahan, T., Eckart, D. W.

Publikováno v: Proceedings of SPIE; 11/ 1/1994, Issue 1, p304-318, 15p

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Conference

HgCdTe photovoltaic detectors and some related aspects.

Autor: Tong, Fei Ming, Yuan, Henry X., Yang, Xiuzhen, Ravindra, Nuggehalli M.

Publikováno v: Proceedings of SPIE; Nov1992, Issue 1, p182-192, 11p

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Conference

Investigation of surface-related electrical crosstalk in Hg1-xCdxTe photodiode arrays.

Autor: Yuan, Henry X., Tong, Fei Ming

Publikováno v: Proceedings of SPIE; Nov1992, Issue 1, p101-108, 8p

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DYNAMIC STORAGE TIME MEASUREMENTS OF N-TYPE Hg1-xCdxTe METAL-INSULATOR-SEMICONDUCTOR DEVICES

Autor: Tong Fei-Ming, Huang He, Zheng Guo-Zhen, Tang Ding-Yuan

Publikováno v: Acta Physica Sinica. 43:1883

Dynamic storage time has been measured for x=0.31 n-type Hg1-xCdxTe metal-insulator semiconductor (MIS) devices over temperature range of 68 to 250K. The theoretical calculations have been made in analysing the mechanisms of dark currents. The result

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ad96dba03c005916cb9c13d95256e711
https://doi.org/10.7498/aps.43.1883

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HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES

Autor: Lu Wei, Li Qi-Guang, Tang Ding-Yuan, Jiang Shan, Yuan Hao-Xin, Tong Fei-Ming

Publikováno v: Acta Physica Sinica. 39:464

Theoretical and experimental studies have been made about the electrical characteristics of Hg1-xCdxTe n+-p photodiodes with x=0.5 at room temperature and at hydrostatic pressures up to 2GPa. The observed "anomalous" pressure dependence of the curren

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3f0eb61f293776491b5ea29c6ef2323
https://doi.org/10.7498/aps.39.464

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