Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Tonao Yuasa"'
Autor:
Masayasu Ueno, Tonao Yuasa
Publikováno v:
Infrared Absorbing Dyes ISBN: 9781489920485
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad2357688fdf6aeeb50f02c5232424c6
https://doi.org/10.1007/978-1-4899-2046-1_9
https://doi.org/10.1007/978-1-4899-2046-1_9
Publikováno v:
Japanese Journal of Applied Physics. 30:L371
Dark-line defects (DLDs) of threading dislocation origin in strained InGaAs/AlGaAs quantum well laser diodes were observed by the electron-beam induced current technique. Current density dependence for the DLD growth velocity was compared quantitativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9915838be92060014c51aa52cdd10c29
https://doi.org/10.1143/jjap.30.l371
https://doi.org/10.1143/jjap.30.l371
Autor:
Kenichi Kobayashi, Tonao Yuasa, Yoshiyasu Ueno, Seiji Kawata, Tohru Suzuki, Kenji Endo, Hiroaki Fujii, Akiko Gomyo, Kunihiro Hara
Publikováno v:
Japanese Journal of Applied Physics. 29:L1666
Window-structure AlGaInP visible-light ( λL=680 nm) laser diodes (LDs) have been fabricated, for the first time, by utilizing GaInP natural superlattice (NSL) disordering with selective Zn diffusion. The bandgap energy for the active layer near the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d3a0bb17f868614a626998832266541
https://doi.org/10.1143/jjap.29.l1666
https://doi.org/10.1143/jjap.29.l1666
Autor:
Hitoshi Hotta, Kenichi Kobayashi, Akiko Gomyo, Kentaro Tada, Yoshiyasu Ueno, Tonao Yuasa, Kunihiro Hara
Publikováno v:
Japanese Journal of Applied Physics. 29:L1669
632.7 nm continuous wave operation was achieved at 20°C, by an AlGaInP visible laser diode (LD) with an AlGaInP quaternary active layer fabricated on a (001) GaAs substrate with a misorientation angle of 6° toward the [110] direction. The epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c850a2a13de2bc8ed0f91a9862594878
https://doi.org/10.1143/jjap.29.l1669
https://doi.org/10.1143/jjap.29.l1669
Autor:
Masaya Mannoh, Shigeya Naritsuka, Keisuke Shinozaki, K. Yamanaka, Y. Nomura, Makoto Ishii, Tonao Yuasa, M. Mihara
Publikováno v:
Journal of Applied Physics. 55:3765-3768
We have studied defect‐related emissions in low‐temperature (∼4 K) photoluminescence of lightly Si‐doped AlxGa1−xAs (x 0.27. This suggests different origins for the (d,X) and (d) emissions. The (d,X) and (d) emissions are tentatively associ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98729c6ffefeec56b65478884df876dc
https://doi.org/10.1063/1.332931
https://doi.org/10.1063/1.332931
Publikováno v:
Japanese Journal of Applied Physics. 15:2393-2401
CW optical output power was investigated in (AlGa)As double heterostructure lasers. An analysis on CW optical power is presented, and parameters related to device characteristics and heat-sinking are analyzed in order to obtain laser operation with h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d2496c490cc2382b4ba403863f61c3
https://doi.org/10.1143/jjap.15.2393
https://doi.org/10.1143/jjap.15.2393
Autor:
Isamu Sakuma, Junji Hayashi, Takao Furuse, Yoshishige Matsumoto, Tonao Yuasa, Yuichi Ide, Yoichi Isoda, Kentaro Onabe
Publikováno v:
Journal of Applied Physics. 54:50-56
InGaAsP/InP double heterostructure lasers with buried rib waveguide structure in which p‐quaternary rib waveguide layers surrounded by n‐InP are formed adjacent to the active layers, are proposed for the 1.5–1.6 μm wavelength range and have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::305e42752c22cceeeaff0fe788e44727
https://doi.org/10.1063/1.331685
https://doi.org/10.1063/1.331685
Autor:
Masaya Mannoh, Keisuke Shinozaki, Makoto Ishii, Tonao Yuasa, Shigeya Naritsuka, Tomoyuki Yamada
Publikováno v:
Journal of Applied Physics. 62:764-770
Growth and device characteristics of an index‐guided GaAs/AlGaAs multiquantum‐well (MQW) laser, called a pair‐groove‐substrate (PGS) MQW laser, are described in detail. The laser structure is fabricated by using single‐step molecular‐beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4128f66851aade5ff968eb1c6fa30239
https://doi.org/10.1063/1.339730
https://doi.org/10.1063/1.339730
Autor:
Tonao Yuasa, Makoto Ishii
Publikováno v:
Physical Review B. 37:7001-7009
Two-dimensional (2D) and three-dimensional (3D) behavior of electron gas (plasmons) in selectively doped GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As multiple-quantum-well (MQW) structures have been studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1abd474a01a38d71a612feed0983ae4
https://doi.org/10.1103/physrevb.37.7001
https://doi.org/10.1103/physrevb.37.7001
Publikováno v:
Applied Physics Letters. 47:728-731
We investigated molecular beam epitaxial growth characteristics on (001) GaAs substrates with a pair of etched grooves along the 〈110〉 direction. It is found that, as the growth proceeds, the mesa width between the pair of grooves gradually decre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa2a2fcf40e54213ec1e2c7f9825be9f
https://doi.org/10.1063/1.96018
https://doi.org/10.1063/1.96018