Zobrazeno 1 - 10
of 278
pro vyhledávání: '"Tomoyoshi Mishima"'
Publikováno v:
Journal of the Society of Materials Science, Japan. 71:819-823
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3dc6f467512194d2113efdeb6c6805d
https://doi.org/10.2472/jsms.71.819
https://doi.org/10.2472/jsms.71.819
Publikováno v:
Materials Science Forum. 1062:3-7
Impurity incorporation during vapor-phase epitaxy on stepped surfaces was modeled by classifying rate-limiting processes into i) surface diffusion, ii) step kinetics, and iii) segregation. Examples were shown for i) desorption-limited Al incorporatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::030472292363d5e7d2ab17453934ebe0
https://doi.org/10.4028/p-9bg88x
https://doi.org/10.4028/p-9bg88x
Autor:
Hiroki Imabayashi, Yuto Yasui, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima, Kenji Shiojima
Publikováno v:
Japanese Journal of Applied Physics. 62:SA1012
We applied scanning internal photoemission microscopy (SIPM) to clarify the electrical characteristics on the electrode periphery of Ni/n-GaN Schottky contacts. Two types of Schottky contacts with different electrode formation methods were prepared.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::562a738f115bc9ee7b529673edc38d5d
https://doi.org/10.35848/1347-4065/ac8d6f
https://doi.org/10.35848/1347-4065/ac8d6f
Publikováno v:
Japanese Journal of Applied Physics. 61:110902
To apply channeled-ion implantation to cost-effective multi-epitaxial growth for 4H-SiC superjunction devices, we re-evaluated the Al-ion energy (E) dependence of the electronic stopping cross section (S e) in 4H-SiC based on the recently reported se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b55780e5920c2f1f69de07be238df158
https://doi.org/10.35848/1347-4065/ac9ade
https://doi.org/10.35848/1347-4065/ac9ade
Autor:
Tomoyoshi Mishima, Kazuhiro Mochizuki
Publikováno v:
Japanese Journal of Applied Physics. 61:118002
Based on the Burton–Cabrera–Frank (BCF) and Cabrera–Levine theories, supersaturation at steps (σ step) during chemical vapor deposition of 4H-SiC (0001̄) at 1570 °C under the condition of C/Si ratio of unity was estimated from the reported g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a99af3f639a7072b4b244309402c0a
https://doi.org/10.35848/1347-4065/ac9940
https://doi.org/10.35848/1347-4065/ac9940
Publikováno v:
IEEJ Transactions on Electrical and Electronic Engineering. 17:1375-1376
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21521533f8f38bc1d278b0d003e434b
https://doi.org/10.1002/tee.23628
https://doi.org/10.1002/tee.23628
Autor:
Yoshinobu Narita, Naomi Asai, Takehiro Yoshida, Tomoyoshi Mishima, Noboru Fukuhara, Hiroshi Ohta, Fumimasa Horikiri, Kazuki Miwa, Masachika Toguchi, Taketomo Sato
Publikováno v:
IEEE transactions on semiconductor manufacturing. 32(4):489-495
Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than $1~\mu \text{m}$ , with high accuracy. The aspect ratio (depth/width) of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a99f6238520b3c637b540d12db563b73
http://hdl.handle.net/2115/76692
http://hdl.handle.net/2115/76692
Publikováno v:
Japanese Journal of Applied Physics. 61:088005
Anode-size-independent forward current–density/voltage (V) characteristics of circular GaN p+n diodes were extracted (in the V range of 2.7−3.0 V) from measured ones by an estimation technique of the effective anode radius, followed by the least-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2092a469faaac1965595f4cd0ecfeaac
https://doi.org/10.35848/1347-4065/ac838a
https://doi.org/10.35848/1347-4065/ac838a
Autor:
Tomoyoshi Mishima, Kazuhiro Mochizuki
Publikováno v:
Japanese Journal of Applied Physics. 61:078003
Reported experimental results on homoepitaxially grown nitrogen-doped 4H-SiC on (03 3 ¯ 8) and misoriented (0001) substrates under carbon-rich conditions in a SiH4–C3H8–N2–H2 system were analyzed according to surface diffusion theory dealing w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6289a3d813f0ef5048aec3e1cf7e4404
https://doi.org/10.35848/1347-4065/ac6d93
https://doi.org/10.35848/1347-4065/ac6d93