Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tomoya Washizu"'
Autor:
Tomoya Washizu, Tadayoshi Fukushima, Kenichi Hirose, Keiichi Taniguchi, Munehiko Oshima, Takayuki Miyakawa, Toshio Enomoto
Publikováno v:
SAE Technical Paper Series.
In electrified automobiles, wind noise significantly contributes to the overall noise inside the cabin. In particular, underbody airflow is a dominant noise source at low frequencies (less than 500 Hz). However, the wind noise transmission mechanism
Publikováno v:
Journal of Crystal Growth. 468:614-619
Selective epitaxial growth of Ge and Ge1−xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effe
Autor:
Yasuhiko Imai, Shigeru Kimura, Yuki Inuzuka, Wakana Takeuchi, Tomoya Washizu, Shigeaki Zaima, Osamu Nakatsuka, Shinichi Ike
Publikováno v:
ECS Transactions. 75:769-775
We examined the formation of locally strained Ge nanostructures sandwiched between Ge1−x Sn x stressors using metal-organic chemical vapor deposition method. We have investigated the microscopic local strain and stress in the Ge/Ge1−x Sn x hetero
Publikováno v:
Flow, Turbulence and Combustion. 91:607-621
Large eddy simulations of turbulent flow between shrouded co-rotating disks, representing a simplified model of a hard disk drive, are performed. The computation domain surrounds a complete disk and is bounded at top and bottom by half a disk. Theref
Publikováno v:
Japanese Journal of Applied Physics. 57:01AC05
We have investigated the selective growth of a Ge1− x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal–organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the
Autor:
Shinichi Ike, Osamu Nakatsuka, Yuki Inuzuka, Tomoya Washizu, Wakana Takeuchi, Yasuhiko Imai, Shigeru Kimura, Shigeaki Zaima
Publikováno v:
ECS Meeting Abstracts. :2006-2006
The strain engineering is a promising technology not only for low-power CMOS but also for optoelectronic applications of germanium (Ge) devices compatible with the conventional silicon (Si) process technology [1]. In terms of CMOS applications, a uni