Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Tomoya Tamura"'
Autor:
Tomoya TAMURA, Chikara KUDO, Haruhi SHONO, Saori SAKAMOTO, Toru OGATA, Haruka YOSHIDA, Ena CHIBA
Publikováno v:
Journal of the Japan Veterinary Medical Association. 76:e116-e121
Publikováno v:
JAPANESE JOURNAL OF MULTIPHASE FLOW. 36:95-106
Publikováno v:
Journal of Mineralogical and Petrological Sciences. 113:310-315
Publikováno v:
Journal of Mineralogical and Petrological Sciences. 112:324-335
Autor:
Atsushi Kyono, Yuki Nakamoto, Stephen A. Gramsch, Masato Kato, Tomoya Tamura, Masafumi Sakata, Takamitsu Yamanaka
Publikováno v:
American Mineralogist. 100:1752-1761
The Jahn-Teller effect at Cu2+ in cuprospinel CuFe2O4 was investigated using high-pressure single-crystal synchrotron X-ray diffraction techniques at beamline BL10A at the Photon Factory, KEK, Japan. Six data sets were collected in the pressure range
Autor:
Tomoya Tamura, Tsuyohito Ito
Publikováno v:
Chemical Physics Letters. 502:173-175
Copper films are deposited on a silicon substrate using plasma-assisted chemical fluid deposition (P-CFD) in supercritical carbon dioxide (scCO 2 ). The deposition rate at the center (peak) of the deposited circle-shape film, as a function of environ
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Defect classification and characterization on mask substrates and blanks can be used to the identify defect sources within the tool and process. Defect reduction has been achieved in SEMATECH’s EUV Mask Blank Development Center (MBDC), aided by suc
Publikováno v:
Physical Review E. 80
Tsuyohito Ito, Tomoya Tamura, Mark A. Cappelli, and Satoshi Hamaguchi, Physical Review E 80, 067401, 2009
Trajectories of self-sustained laboratory ball lightning, generated by arc discharges with silicon, are investigated for understanding the
Trajectories of self-sustained laboratory ball lightning, generated by arc discharges with silicon, are investigated for understanding the
Autor:
Tomoya Tamura, Seh-Jin Park, Guojing Zhang, Yuta Sato, Kazunori Omata, Hal Kusunose, Andy Ma, Ted Liang
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is a leading technology to succeed optical lithography for high volume production of 22 nm node and beyond. One of the top risks for EUVL is the readiness of defect-free masks, especially the availability of Mo/
Autor:
Anwei Jia, Tomoya Tamura, Patrick A. Kearney, Wonil Cho, Chan-Uk Jeon, Hal Kusunose, Eric M. Gullikson, Atsushi Tajima
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) mask blanks must be free of printable defects. The SEMATECH Mask Blank Development Center (MBDC) is focused on driving down the defect density of EUVL mask blanks by providing a collaborative environment for EUV