Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Tomoya Sugahara"'
Publikováno v:
Lecture Notes in Computer Science ISBN: 9783031208614
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f188b5c2bdd7c76a260dc433d8c5d057
https://doi.org/10.1007/978-3-031-20862-1_2
https://doi.org/10.1007/978-3-031-20862-1_2
Publikováno v:
Journal of Crystal Growth. 264:48-52
High-performance 370 nm ultraviolet light-emitting diodes (UV-LED) with an AlGaN/InGaN single quantum well structure were fabricated on sapphire substrate by using the metal organic chemical vapor deposition (MOCVD) technique. Three group different g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99748e1f079ef5339df48b173a3c0801
https://doi.org/10.1016/j.jcrysgro.2003.12.030
https://doi.org/10.1016/j.jcrysgro.2003.12.030
Publikováno v:
physica status solidi (c). :2432-2435
We have performed a complex study of the dislocation/crack distribution in the misfit-strained AlGaN/GaN systems. Two different samples were analysed without and with top GaN overlayer. The co-existence of the optically visible dominant cracks with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cba607be7f4732b45965b7a0124a103
https://doi.org/10.1002/pssc.200303308
https://doi.org/10.1002/pssc.200303308
Publikováno v:
physica status solidi (c). :2757-2760
We developed a new buffer layer to grow GaN epilayers with a low dislcoation density by metalorganic chemical vapor deposition (MOCVD). The buffer layer consists of a 20 nm GaNP layer deposited at low temperature (500 °C) on sapphire substrate using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1c4a743a1e970444c05b7f66d54e88f
https://doi.org/10.1002/pssc.200303550
https://doi.org/10.1002/pssc.200303550
Autor:
Masahiro Kimura, Shunsuke Kawano, Ryohei Takaki, Kenji Yamashita, Kenji Morioka, Daisuke Sato, Suguru Nohda, Hisao Sato, Tomoya Sugahara, Hong Xing Wang, Takashi Mizobuchi, Akihiko Dempo, Shiro Sakai, Naoki Wada, Tetsuya Tanahashi
Publikováno v:
physica status solidi (a). 200:102-105
High performance LEDs emitting in the wavelength range 360–380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b1a78aff862ef1feb96482397bac0a8
https://doi.org/10.1002/pssa.200303478
https://doi.org/10.1002/pssa.200303478
Publikováno v:
Semiconductor Science and Technology. 15:497-505
We report measurements of photoluminescence, photoluminescence excitation spectroscopy and photoluminescence time decay on three MOVPE-grown InGaN/GaN multiple quantum well structures with 13% In in the wells and well widths Lz = 1.25, 2.5 and 5.0 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe4391849f90343d0720287c23a04228
https://doi.org/10.1088/0268-1242/15/6/302
https://doi.org/10.1088/0268-1242/15/6/302
Publikováno v:
Materials Chemistry and Physics. 64:260-264
Surface morphology studies of GaN and AlGaN grown by metalorganic chemical vapor deposition (MOCVD) have been carried out using atomic force microscopy. The open core dislocation and steps connecting two threading dislocations of opposite direction a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28a12cf5edd13f656fabaf45ef7a6c3c
https://doi.org/10.1016/s0254-0584(99)00234-5
https://doi.org/10.1016/s0254-0584(99)00234-5
Publikováno v:
Journal of Electronic Materials. 29:332-341
A band-tail model of inhomogeneously broadened radiative recombination is presented and applied to interpret experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD. The temperature depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aafc22935a7fd59fe146482ee8d545d
https://doi.org/10.1007/s11664-000-0073-9
https://doi.org/10.1007/s11664-000-0073-9
Autor:
Tsunemasa Taguchi, Katsushi Nishino, C. Sasaki, Satoshi Kurai, Yoichi Yamada, Tomoya Sugahara, Y. Yoshida, Shiro Sakai
Publikováno v:
physica status solidi (b). 216:27-30
Excitonic optical properties of homoepitaxial GaN layers have been studied by means of magneto-luminescence spectroscopy. Under magnetic field perpendicular to the hexagonal c-axis, Zeeman splittings and diamagnetic shifts were observed for the lumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a48d27ef47dc73c0ebfb26955331e9c1
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<27::aid-pssb27>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<27::aid-pssb27>3.0.co
Publikováno v:
physica status solidi (b). 216:279-285
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a17927bc2c39a18a9692e4daf78f7185
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<279::aid-pssb279>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<279::aid-pssb279>3.0.co