Zobrazeno 1 - 10 of 14 pro vyhledávání: '"Tomoya Omori"'
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Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation
Autor: Ryosuke Kondo, Ayumu Yabutani, Tomoya Omori, Kazuki Yamada, Eri Matsubara, Ryota Hasegawa, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya
Publikováno v: Applied Physics Letters. 121:253501
In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The oscillation wavelength, differential quantum efficiency, and slope efficiency of a laser diode wer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::927dfe102e461a7a9a4ce718f6fb6628
https://doi.org/10.1063/5.0135033
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4
Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN
Autor: Kanako Shojiki, Moe Shimokawa, Sho Iwayama, Tomoya Omori, Shohei Teramura, Akihiro Yamaguchi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
Publikováno v: Applied Physics Express. 15:051004
The centimeter-scale laser lift-off (LLO) of a UVB laser diode structure on nano-patterned AlN was demonstrated by using a 257 nm pulsed laser. The mechanism of this LLO, which can be used for vertical light-emitting device fabrications, was analyzed
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::806ef3ec648e2fec80ee7f1a867b6c01
https://doi.org/10.35848/1882-0786/ac6567
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5
Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm−2) using a laser liftoff method
Autor: Moe Shimokawa, Yuya Yamada, Tomoya Omori, Kazuki Yamada, Ryota Hasegawa, Toma Nishibayashi, Ayumu Yabutani, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Hideto Miyake, Kohei Miyoshi, Koichi Naniwae, Akihiro Yamaguchi
Publikováno v: Applied Physics Express. 15:041006
We have successfully fabricated vertical LEDs by separating a 1 × 1 cm2 wafer composed of deep-ultraviolet LED on a sapphire substrate from the substrate using a laser liftoff (LLO) method. Reproducible substrate separation was achieved by the LLO m
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9f6de5bf96081053db59dd215addf50
https://doi.org/10.35848/1882-0786/ac5e64
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6
Recent development of UV-B laser diodes
Autor: Shunya Tanaka, Ayumu Yabutani, Kosuke Sato, Ryota Hasegawa, Sho Iwayama, Motoaki Iwaya, Moe Shimokawa, Tetsuya Takeuchi, Kazuki Yamada, Satoshi Kamiyama, Tomoya Omori, Hideto Miyake
Publikováno v: Japanese Journal of Applied Physics. 61:040501
This review paper describes the historical development, current issues, and future expectations of UV-B laser diodes, which are expected to be adopted in various applications such as in microfabrication and biotechnology in the near future. To achiev
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::143e8a2139ede946162b6da050abe3f5
https://doi.org/10.35848/1347-4065/ac3be8
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7
Reduction of dislocation density in lattice-relaxed Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B laser diodes
Autor: Tomoya Omori, Ayumu Yabutani, Shunya Tanaka, Kazuki Yamada, Moe Shimokawa, Ryota Hasegawa, Sho Iwayama, Hideto Miyake, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
Publikováno v: Applied Physics Express. 15:031004
We report the results of crystal growth of thick AlGaN films on periodical 1 μm spacing AlN pillar concave-convex patterns and their impact on the performance of UV-B laser diodes. The formation of voids in the AlGaN film by increasing the AlN pilla
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::59d3d4825ac8ac24610105e53f3f8cc8
https://doi.org/10.35848/1882-0786/ac5724
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9
AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate
Autor: Hideto Miyake, Tomoya Omori, Kosuke Sato, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Sho Iwayama, Moe Shimokawa, Shunya Tanaka, Shohei Teramura, Kazuki Yamada, Isamu Akasaki
Publikováno v: Applied Physics Express. 14:055505
Room-temperature pulsed oscillation with a laser wavelength of 290 nm and a threshold current density of 35 kA cm−2 was achieved by fabricating a UV-B laser diode on a thick AlGaN film formed on a 1 μm periodic concavo–convex pattern AlN (PCCP-A
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7257c4671eeb079ea99e658d1cf8579f
https://doi.org/10.35848/1882-0786/abf763
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