Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Tomonori Mizushima"'
Autor:
Tomonori, Mizushima, author
Publikováno v:
Chinese (Taiwan) Yearbook of International Law and Affairs. 33:11-20
Autor:
Tomonori, Mizushima
Publikováno v:
The American Journal of International Law, 2003 Apr 01. 97(2), 406-411.
Externí odkaz:
https://www.jstor.org/stable/3100116
Autor:
Tomonori, Mizushima
Publikováno v:
The Modern Law Review, 2001 May 01. 64(3), 472-480.
Externí odkaz:
https://www.jstor.org/stable/1097012
Autor:
Koji Nakayama, Akihiro Koyama, Yuji Kiuchi, Atsuko Kimoto, Tomohisa Kato, Kensuke Takenaka, Tomonori Mizushima, Yoshiyuki Yonezawa, Hitoshi Ishimori, Mitsuru Sometani, Hajime Okumura, Shinichiro Matsunaga, Manabu Takei
Publikováno v:
Materials Science Forum. 1004:899-904
We demonstrate 20 kV-class 4H-SiC n-channel implantation and epitaxial (IE)-IGBTs having both low on-state voltage and high blocking characteristics. We fabricated n-IE-IGBTs on a (0001) silicon face with free-standing epitaxial layers. Effective car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9570d5bf891e0b47ee1380788f46e62b
https://doi.org/10.4028/www.scientific.net/msf.1004.899
https://doi.org/10.4028/www.scientific.net/msf.1004.899
Autor:
Tomonori, Mizushima
Publikováno v:
The Modern Law Review, 2008 Sep 01. 71(5), 734-752.
Externí odkaz:
https://www.jstor.org/stable/25151236
Autor:
Yoshiyuki Yonezawa, Tomonori Mizushima, Hiroshi Yamaguchi, Shinichiro Matsunaga, Yuji Iizuka, Kunio Koseki
Publikováno v:
IEEE Transactions on Industry Applications. 54:3558-3565
An n -channel silicon carbide (SiC) insulated gate bipolar transistor with a reverse blocking voltage of 16 kV was fabricated on a 4H-SiC carbon face. A double-pulse test with a dc-bus voltage of 5 kV and an inductive load was conducted to observe th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f1ef242d9904ee97fdafa72d918e72
https://doi.org/10.1109/tia.2018.2824247
https://doi.org/10.1109/tia.2018.2824247
Autor:
Yuji Kiuchi, Shinichiro Matsunaga, Kensuke Takenaka, Hajime Okumura, Yoshiyuki Yonezawa, Akihiro Koyama, Tomonori Mizushima
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
The SiC MOS thyristor with IGBT was designed and fabricated for the first time. Von of 5 V and R onA,diff of 15 mΩcm2 were improved over IGBTs fabricated under the same wafer and process conditions. The on-characteristics were almost constant with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e08383cea7afab46b7e97741f74be32
https://doi.org/10.1109/iedm19573.2019.8993648
https://doi.org/10.1109/iedm19573.2019.8993648
Autor:
Yuji Kiuchi, Tomonori Mizushima, Tetsuo Hatakeyama, Koji Nakayama, Yoshiyuki Yonezawa, Manabu Takei, Shinichiro Matsunaga, Hajime Okumura, Hiroyuki Fujisawa, Kensuke Takenaka, Akihiro Koyama, Tsunenobu Kimoto
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Ultra-high-voltage 4H-SiC PiN diode with a space-modulated junction termination extension and carrier injection control has been investigated. The introduction of a space-modulated region results in a high breakdown voltage of 27.5 kV, that is the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a07add031c17d690fbc13b458400ccd
https://doi.org/10.1109/ispsd.2018.8393686
https://doi.org/10.1109/ispsd.2018.8393686
Autor:
Yoshiyuki Sakai, Takashi Shinohe, Takashi Tsutsumi, Naoki Kumagai, Akihiro Otsuki, Dai Okamoto, K. Asano, Mitsuo Okamoto, Tetsuo Hatakeyama, Masaaki Miyajima, Yasunori Tanaka, Hiroyuki Fujisawa, Hitoshi Kimura, Mitsuru Sometani, Shinsuke Harada, Yoshiyuki Yonezawa, Kenji Fukuda, Kazuto Takao, Tomohisa Kato, Tadayoshi Deguchi, Kensuke Takenaka, Toru Izumi, Tomonori Mizushima, M. Yoshikawa, Masayuki Arai, Shinichiro Matsunaga, Hajime Okumura, Tsunenobu Kimoto, Tsukasa Hayashi, Koji Nakayama, Manabu Takei
Publikováno v:
Materials Science Forum. :842-846
Ultrahigh-voltage SiC flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance was investigated. A large device (8 mm × 8mm) with a blocking voltage greater than 16 kV was achieved, and an on-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64fcfd133c0fb90523d8ff9d7b2158d0
https://doi.org/10.4028/www.scientific.net/msf.821-823.842
https://doi.org/10.4028/www.scientific.net/msf.821-823.842
Autor:
Yasunori Tanaka, Shinichiro Matsunaga, Takashi Shinohe, Tomonori Mizushima, Katsunori Asano, Shuji Katakami, Kazuto Takao, Kenji Fukuda, Syuuji Ogata, Hajime Okumura, Toru Izumi, Tomohisa Kato, Manabu Arai, Hiroyuki Fujisawa, Kensuke Takenaka, Dai Okamoto, Tadayoshi Deguchi, Mitsuo Okamoto, Toshihiko Hayashi, Yoshiyuki Yonezawa, Shinsuke Harada, Tsunenobu Kimoto, Manabu Takei
Publikováno v:
IEEE Transactions on Electron Devices. 62:396-404
Ultrahigh-voltage silicon carbide (SiC) devices [p-i-n diodes and insulated-gate bipolar transistors (IGBTs)] and switching test have been investigated. As a result, we have succeeded in developing a 13-kV p-i-n diode, 15-kV p-channel IGBT, and 16-kV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d002661022b537992bc0912b19c4e4ac
https://doi.org/10.1109/ted.2014.2357812
https://doi.org/10.1109/ted.2014.2357812