Zobrazeno 1 - 10
of 431
pro vyhledávání: '"Tomonori Ito"'
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045029-045029-6 (2020)
The electronic structure, magnetic, optical and magneto-optical properties of yttrium iron garnet (YIG) were investigated by using first-principles calculations with Hubbard energy correction for the treatment of the strong electron correlation. The
Externí odkaz:
https://doaj.org/article/d70bdaec198d48c28266f6b2bc871d43
Autor:
Kento Yamamoto, Abdul-Muizz Pradipto, Kenji Nawa, Toru Akiyama, Tomonori Ito, Teruo Ono, Kohji Nakamura
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 056302-056302-5 (2017)
Dzyaloshinskii-Moriya interaction (DMI) at metallic multilayer interfaces of Co thin films and heavy-metals X (X=Ir, Pt) was investigated from first principles calculations that treat spin-spirals with the spin-orbit coupling. The results predict tha
Externí odkaz:
https://doaj.org/article/dd7b6911b90046d2aa6e3bec022794cc
Publikováno v:
Materials, Vol 6, Iss 8, Pp 3309-3360 (2013)
We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate th
Externí odkaz:
https://doaj.org/article/c25980101e7040f5831822a603fe21e8
Autor:
Tomonori Ito, Toru Akiyama
Publikováno v:
Crystals, Vol 7, Iss 2, p 46 (2017)
Recent progress in computational materials science in the area of semiconductor epitaxial growth is reviewed. Reliable prediction can now be made for a wide range of problems, such as surface reconstructions, adsorption-desorption behavior, and growt
Externí odkaz:
https://doaj.org/article/85fea86f734a4e9aa72dac96fe659eaf
Autor:
Hiroshi Inami, Tsuyoshi Mizutani, Junko Watanabe, Hisashi Hayashida, Tomonori Ito, Takeshi Terasawa, Toru Kontani, Hiroaki Yamagishi, Hiroyuki Usuda, Naohiro Aoyama, Emiko Imamura, Takeshi Ishikawa
Publikováno v:
Bioorganic & Medicinal Chemistry. 87:117302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb34c6f7e0328127015f225e38f84fd4
https://doi.org/10.1016/j.bmc.2023.117302
https://doi.org/10.1016/j.bmc.2023.117302
Publikováno v:
ECS Transactions. 98:155-164
Group-III nitride semiconductors have attracted much attention for application in optoelectronic devices such as light emitting diodes and laser diodes. In particular, highly efficient light emitting devices using self-assembled quantum dots have bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1fdc9c6583bb8227d1e0e0723e1ccf7
https://doi.org/10.1149/09806.0155ecst
https://doi.org/10.1149/09806.0155ecst
Autor:
Masashi Uematsu, Toru Akiyama, Kohji Nakamura, Hiroyuki Kageshima, Tsunashi Shimizu, Tomonori Ito, Kenji Shiraishi
Publikováno v:
ECS Transactions. 98:37-46
4H-SiC is a key material for applying in power electronics devices because of its superior physical properties. Furthermore, SiO2 oxide films which are crucial for manufacturing electronic devices such as metal-oxide-semiconductor field-effect transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f1efb1bae8b23056445d032c0394997
https://doi.org/10.1149/09803.0037ecst
https://doi.org/10.1149/09803.0037ecst
Publikováno v:
Crystal Growth & Design. 20:4358-4365
The adsorption behavior of adatoms on stepped GaN(0001) surfaces during metalorganic vapor phase epitaxy (MOVPE) is theoretically investigated on the basis of ab initio calculations. The calculatio...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a50aef3bba663a399d26ad3e6d5795ce
https://doi.org/10.1021/acs.cgd.0c00117
https://doi.org/10.1021/acs.cgd.0c00117
Autor:
Muhammad Arifin, Tomonori Ito, Abdul-Muizz Pradipto, Toru Akiyama, Takahiro Matsumoto, Kohji Nakamura
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 18:133-138
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f8998c9585a69d59f28e6db0af3103
https://doi.org/10.1380/ejssnt.2020.133
https://doi.org/10.1380/ejssnt.2020.133
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1031
The structural stability and miscibility of (Al x Ga1−x )2O3 alloys are theoretically investigated by means of electronic structure calculations within density functional theory. Effects of lattice constraint due to α-Al2O3(0001) substrate and (Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ab55768f266a1d8a7749170dd854f05
https://doi.org/10.35848/1347-4065/acae5f
https://doi.org/10.35848/1347-4065/acae5f